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Dive into the research topics where Chi-Wen Liu is active.

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Featured researches published by Chi-Wen Liu.


Journal of Vacuum Science and Technology | 2005

Effect of plating current density and annealing on impurities in electroplated Cu film

Chi-Wen Liu; Ying-Lang Wang; Ming-Shih Tsai; Hsien-Ping Feng; Shih-Chieh Chang; Gwo-Jen Hwang

This study uses secondary-ion-mass spectrometry to examine the effects of plating current density and annealing temperature on the nature of electroplated copper (Cu) films. The experimental results reveal that high levels of impurities, such as C, O, S, and Cl, are incorporated into Cu deposits at the lower current density region while superfilling occurs. The C and O impurities can be released from the plated films by thermal annealing, while S and Cl cannot. This work proposes a possible mechanism based on bond strength to explain the phenomena. Rapid C and O desorption is observed when the films are first cycled to 220°C immediately after electroplating. The activation energy of C desorption is found to be approximately 9.8kJ∕mol. For Cu electroplating, this investigation suggests that high plating current density and an adequate annealing temperature are required to reduce impurities.


Journal of Vacuum Science and Technology | 2004

Effects of wetting ability of plating electrolyte on Cu seed layer for electroplated copper film

Chi-Wen Liu; Jung-Chih Tsao; Ming-Shih Tsai; Ying-Lang Wang

This work examines the impact of the wetting ability of a plating electrolyte on the Cu seed layer on copper electroplating performance. The contact angle of the electrolyte on the Cu seed is highly sensitive to additive decomposition in the electrolyte, as well as being sensitive to Cu seed self-annealing. The contact angle of the electrolyte decreases in the presence of polyethylene glycol (PEG), which forms complexes with chloride ions and is absorbed on the Cu surface during plating. However, the consumption of the additives, particularly that of chloride ions, degrades this adsorption. Additionally, the increase in Cu-seed surface roughness owing to self-annealing also reduces electrolyte wettability, compared to the as-received Cu-seed layer. The poor wettability can be improved with additional rinsing. The x-ray photoelectron spectroscopy (XPS) spectrum demonstrates that the Cu surface was covered with a native cupric-hydroxide layer after rinsing, which was hydrophilic (as in the aqueous-plating b...


Archive | 2006

Post ECP multi-step anneal/H2 treatment to reduce film impurity

Hsien-Ping Feng; Jung-Chih Tsao; Hsi-Kuei Cheng; Chih-Tsung Lee; Ming-Yuan Cheng; Steven Lin; Ray Chuang; Chi-Wen Liu


Archive | 2004

Method and apparatus for copper film quality enhancement with two-step deposition

Chi-Wen Liu; Hsien-Ping Feng; Jung-Chih Tsao


Archive | 2004

Method of forming barrier layer with reduced resistivity and improved reliability in copper damascene process

Kei-Wei Chen; Jung-Chih Tsao; Chi-Wen Liu; Jchung-Chang Chen; Shih-Tzung Chang; Shih-Ho Lin; Yu-Ku Lin; Ying-Lang Wang


Archive | 2003

Method of reducing the pattern effect in the CMP process

Chi-Wen Liu; Jung-Chih Tsao; Shien-Ping Feng; Kei-Wei Chen; Shih-Chi Lin; Ray Chuang


Archive | 2004

Method to eliminate plating copper defect

Jung-Chin Tsao; Chi-Wen Liu; Hsien-Ping Feng; Hsi-Kuei Cheng; Steven Lin; Min-Yuan Cheng


Archive | 2014

Semiconductor Device With Multi Level Interconnects And Method Of Forming The Same

Jeng Min Liang; Ying-Lang Wang; Kei-Wei Chen; Chi-Wen Liu; Kuo-Hsiu Wei; Kuo-Feng Huang


Archive | 2004

Method and apparatus for stabilizing plating film impurities

Hsien-Ping Feng; Ming-Yuang Cheng; Si-Kwua Cheng; Steven Lin; Jung-Chih Tsao; Chen-Peng Fan; Chi-Wen Liu


Archive | 2003

Thrust pad assembly for ECP system

Jung-Chih Tsao; Kei-Wei Chen; Chi-Wen Liu; Shi-Chi Lin; Ray Chuang

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