Chung H. Lam | Researchain

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Featured researches published by Chung H. Lam.

Archive | 1992

Process for improving sheet resistance of an integrated circuit device gate

John Howard Givens; James S. Nakos; Peter A. Burke; Craig Marshall Hill; Chung H. Lam

Archive | 1991

BORON OUT-DIFFUSED SURFACE STRAP PROCESS

Chung H. Lam; Jerome B. Lasky; Craig Marshall Hill; James S. Nakos; Steven J. Holmes; Stephen F. Geissler; David K. Lord

Archive | 1995

Method of making semiconductor trench capacitor cell having a buried strap

Chung H. Lam; David K. Lord; Judith A. Wright

Archive | 2010

METHOD TO REDUCE RESET CURRENT OF PCM USING STRESS LINER LAYERS

Mathew J. Breitwisch; Eric A. Joseph; Chung H. Lam; Bipin Rajendran; Alejandro G. Schrott

Archive | 2012

Comparison of data retention measured by static laser testing and in PCRAM devices

Simone Raoux; Daniele Garbin; Chao-I Wu; Huai-Yu Cheng; Roger W. Cheek; Anja König; Matthias Wuttig; M. BrightSky; Hsiang-Lan Lung; Chung H. Lam

Archive | 2000

IC WITH THREE-LAYER POLYSILICON BURIED NVRAM CELL AND ITS MANUFACTURE

Chung H. Lam; Glen L. Miles; James S. Nakos; Christa R. Willets; クリスタ・アール・ウィレッツ; グレン・エル・マイルズ; ジェームズ・スピロス・ナコス; チュン・ホン・ラム

international reliability physics symposium | 2018

Reliability benefits of a metallic liner in confined PCM

W. Kim; SangBum Kim; Robert L. Bruce; F. Carta; Gloria Fraczak; A. Ray; Chung H. Lam; M. BrightSky; Yu Zhu; T. Masuda; K. Suu; Yujun Xie; Y. Kim; Judy J. Cha

232nd ECS Meeting (October 1-5, 2017), | 2017

(Invited) A Confined Phase Change Memory for M-Type Storage Class Memory

W. Kim; Matt BrightSky; Takeshi Masuda; SangBum Kim; Robert L. Bruce; Fabio Carta; Gloria Fraczak; A. Ray; Yu Zhu; Koukou Suu; Chung H. Lam

Archive | 2016

Recent Progress in Phase-Change_newline Memory Technology

Geoffrey W. Burr; M. BrightSky; Abu Sebastian; Huai-Yu Cheng; Jau-Yi Wu; SangBum Kim; Norma Sosa; Nikolaos Papandreou; Hsiang-Lan Lung; Haralampos Pozidis; Evangelos S. Eleftheriou; Chung H. Lam

Meeting Abstracts | 2012