Cung D. Tran

Challenges in 65nm Poly, RX and STI Defect Learning

During manufacturing transitioning from 90 nm to 65 nm node in IBMs 300 mm fab, FEOL (front end of line) defect pareto shifted as a result of the changes in integration scheme. By combining the optically based in-line inspection and electrical kerf test, key yield detractors were identified and addressed. Not all optically detected defects are true killers. Wafer functional test and physical failure analysis provided the ultimate determination for the significance of detractors.

Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements

Conventional 1D single level transmission line model (TLM) to extract silicide-silicon contact resistivity does not take into account silicide sheet resistance. In this paper, 1D dual level TLM model approximation is used for extraction of the silicide sheet resistance and silicide-silicon contact resistivity. Experiments involving Platinum content increase in Nickel Silicide and pre-silicide Carbon implant in Silicon Germanium (SiGe) PMOS is analyzed using our model.