Daniel Wack

First-principles calculations of the dielectric properties of silicon nanostructures

We have investigated the static dielectric properties of silicon rods and slabs below 10nm, in the long wavelength limit, by using first-principles density functional theory calculations. Surface structure is found to be the most important factor affecting the changes of the dielectric response at the nanoscale, compared to that of bulk Si, with significant differences observed between slabs and finite rods of similar lateral dimensions.

Dark-field optical scatterometry for line-width-roughness metrology

As CMOS transistor critical dimensions (CDs) shrink to 35 nm and below, monitoring and control of line width roughness (LWR) and line edge roughness (LER) will become increasingly important. We used dark-field twodimensional beam profile reflectometry at 405 nm wavelength with a 0.9 numerical aperture (NA) objective to measure the low levels of diffuse scattered light from the roughness on the surfaces of lines in test structures on a wafer created by ISMI. This wafer contains a variety of amorphous etched gate test structures with a range of CDs from approximately 20 nm to 50 nm. Selected structures were thoroughly characterized for CD, LER and LWR by a critical-dimension scanning electron microscope (CD-SEM). The integrated diffuse scattered intensities obtained from structures with different CD and LWR values were compared to LWR as measured by the CD-SEM. The diffuse scattered optical signal intensity showed, at best, a weak correlation to the CD-SEM measured LWR. However a plot of the diffuse scattered intensity versus CD-SEM measured CD showed a strong, but nonlinear, correlation. This indicates that the scattering depends not only on the surface roughness but also on the CD of the line (and presumably other details of the profile).

Opportunities and challenges for optical CD metrology in double patterning process control

We review early challenges and opportunities for optical CD metrology (OCD) arising from the potential insertion of double patterning technology (DPT) processes for critical layer semiconductor production. Due to the immaturity of these new processes, simulations are crucial for mapping performance trends and identifying potential metrology gaps. With an analysis methodology similar in spirit to the recent NIST OCD extendability study1, but with aperture and noise models pertinent to current or projected production metrology systems, we use advanced simulation tools to forecast OCD precision performance of key structural parameters (eg., CD, sidewall angle) at litho (ADI) and etch (ACI) steps for a variety of mainstream optical measurement schemes, such as spectroscopic or angle-resolved, to identify strengths and weaknesses of OCD metrology for patterning process control at 32 and 22nm technology nodes. Test case geometries and materials for the simulated periodic metrology targets are derived from published DPT process flows, with ITRS-style scaling rules, as well as rather standard scanner qualification use cases. Consistent with the NIST study, we find encouraging evidence of OCD extendability through 22nm node dense geometries, a surprising and perhaps unexpected result, given the near-absence of published results for the inverse optical scattering problem for periodic structures in the deep sub-wavelength regime.

EUV mask inspection with 193 nm inspector for 32 and 22 nm HP

Reticle quality and the capability to qualify a reticle are key issues for EUV Lithography. We expect current and planned optical inspection systems will provide inspection capability adequate for development and production of 2X HP masks. We illustrate inspection technology extendibility through simulation of 193nm-based inspection of advanced EUV patterned masks. The influence of EUV absorber design for 193nm optical contrast and defect sensitivity will be identified for absorber designs of current interest.

Mask inspection technologies for 22nm HP and beyond

Reticle quality and the capability to qualify a reticle are key issues for EUV Lithography. We expect current and planned optical inspection systems will provide inspection capability adequate for development and production of 2X HP masks. We illustrate inspection technology extendibility through simulation of 193nm-based inspection of advanced EUV patterned masks. The influence of EUV absorber design for 193nm optical contrast and defect sensitivity will be identified for absorber designs of current interest.