Darragh Buckley

Solution processed ZnO homogeneous quasisuperlattice materials

Heterogeneous multilayered oxide channel materials have enabled low temperature, high mobility thin film transistor technology by solution processing. The authors report the growth and characterization of solution-based, highly uniform and c-axis orientated zinc oxide (ZnO) single and multilayered thin films. Quasisuperlattice (QSL) metal oxide thin films are deposited by spin-coating and the structural, morphological, optical, electronic, and crystallographic properties are investigated. In this work, the authors show that uniform, coherent multilayers of ZnO can be produced from liquid precursors using an iterative coating-drying technique that shows epitaxial-like growth on SiO2, at a maximum temperature of 300 °C in air. As QSL films are grown with a greater number of constituent layers, the crystal growth direction changes from m-plane to c-plane, confirmed by x-ray and electron diffraction. The film surface is smooth for all QSLs with root mean square roughness <0.14 nm. X-ray photoelectron spectros...

Highly-Ordered Growth of Solution-Processable ZnO for Thin Film Transistors

We demonstrate that crystalline, epitaxial-like and highly ordered ZnO thin films and quasisuperlattice structures can be achieved from a precursor liquid at relatively low temperature via spin-coating. The synthesised films are smooth, stoichiometric ZnO with controllable thickness. An iterative layer-by-layer coating schematic is employed to demonstrate the effects of film thickness on structure, morphology as well as the surface and internal defects. Characterisation of the crystallinity, morphology, O-vacancy formation, stoichiometry, surface roughness and thickness variation was determined through X-ray diffraction, scanning and transmission electron and atomic force microscopy, X-ray photoelectron and photoluminescence spectroscopy. We demonstrate that iterative spin-coating of deposited ZnO films results in a transition in crystal texture with increasing thickness (number of layers) from the [101̅0] m-plane to the [0002] c-plane. The films attain a c-axis preferential orientation, with no other crystalline peaks present. Results show that the film’s surface morphology was very smooth, with average rms roughness <0.15 nm. Examination of these films also shows the consistency of the surface composition and defect level while highlighting the effect of temperature and cumulative annealing condition on the internal defect concentration.

Optical reflectivity of spin-coated multilayered ZnO and Al:ZnO Thin Films

Controlling growth, doping, crystallization, thickness of thin films of thin film transistor (TFT) channel materials is required in order to improve and control physical properties, primarily electronic conductivity and optical transparency. With the advent of flexible electronics and curved TFT-based display panels, low cost, solution-processed methods are important and provide scalable coating methods on a range of substrates. This work demonstrates the changes to the morphology, crystalline structure, optical reflectivity and electrical conductance of solution-processed ZnO thin films by the inclusion of an aluminium dopant during spin-coating. The measurements also determine the compositional chemical state of the Al:ZnO structures compared to ZnO using X-ray photoelectron spectroscopy in conjunction with detailed X-ray diffraction and transmission electron microscopy examination of the film morphology.