Devnath Varadarajan
National Semiconductor
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Publication
Featured researches published by Devnath Varadarajan.
international solid-state circuits conference | 2002
Vijaya Ceekala; Lawrence D. Lewicki; James B. Wieser; Devnath Varadarajan; Jitendra Mohan
A method for reducing the effects of random mismatches in CMOS bandgap references reduces effects of CMOS current-mirror offsets and input-referred offsets of CMOS opamps. The circuit is fabricated in a 0.18 /spl mu/m CMOS process. Measured 3 sigma output voltage distribution is /spl sim/1%.
bipolar/bicmos circuits and technology meeting | 2008
Khaldoon Abugharbieh; Jitendra Mohan; Devnath Varadarajan; Ivan Duzevik; Shoba Krishnan
This paper describes a new topology and implementation of a 10 Gbps LVDS (low voltage differential signaling) voltage mode output driver designed for high speed data transfer applications. Using a positive feedback technique, the driver achieves ultra low power operation while maintaining the proper internal chip impedance required for matching the line impedance. As a result, signal reflection is minimized and good signal integrity is achieved. The driver, which consists of a pre-driver and an output stage, consumes a total of 15.63mW at speed power. It provides a single ended output swing of 400mV and a common mode voltage of 1.25V which are compliant with LVDS standards. In measurements, the driver, which was a part of an equalizer chip, achieved peak to peak jitter of 11psec at 10Gbps. The chip is fabricated in a standard 2.5V/1.2V SiGe BiCMOS technology with 100 GHz peak ft, and packaged in a commercial LLP package.
international conference on microelectronics | 2008
Khaldoon Abugharbieh; Shoba Krishnan; Jitendra Mohan; Devnath Varadarajan
This paper describes a new topology and implementation of a 10 Gbps voltage mode output driver designed for high speed data transfer applications. Using a positive feedback technique, the low power driver achieves the proper internal chip impedance required for matching the line impedance. As a result, return loss is minimized and good signal integrity is achieved. The driver, which consists of a pre-driver and an output stage, consumes a total of 17mW at speed power and S22 return loss performance better than -15dB. It provides a single ended output swing of 400mV. In measurements, the driver, which was a part of an equalizer chip, achieved peak to peak jitter of 11psec at 10Gbps. The chip is fabricated in a standard 2.5V/1.2V SiGe BiCMOS technology with 100 GHz peak ft, and packaged in a commercial LLP package.
Archive | 2000
Jitendra Mohan; Devnath Varadarajan; Vijaya Ceekala
Archive | 2002
Vijaya Ceekala; James B. Wieser; Devnath Varadarajan; Laurence D. Lewicki; Jitendra Mohan
Archive | 2003
Devnath Varadarajan; Laurence D. Lewicki
Archive | 2001
Ramsin M. Ziazadeh; Jitendra Mohan; Abu-Hena Mostafa Kamal; Devnath Varadarajan
Archive | 2001
Ramsin M. Ziazadeh; Jitendra Mohan; Devnath Varadarajan; Vjay Ceekala
Archive | 2007
Devnath Varadarajan
Archive | 2001
Jitendra Mohan; Devnath Varadarajan; Vijaya Ceekala