Ebenezer E. Eshun

Product applications and technology directions with SiGe BiCMOS

In this paper we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. Examples include high speed device design, power amplifiers, integrated VCOs and very high level integration.

High performance, low complexity 0.18 /spl mu/m SiGe BiCMOS technology for wireless circuit applications

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F/sub t//F/sub max/ of 60/85 GHz with a 3.0 V BV/sub CEO/. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.

A low complexity 0.13 /spl mu/ SiGe BiCMOS technology for wireless and mixed signal applications

We present IBMs next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.

A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies

We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (<40 ppm/V) for a high-k MIM dielectric (4.5 fF/m/sup 2/) that is both Al and Cu BEOL compatible. Also, we discuss the scaling of dielectric films to achieve excellent bias linearity, while attaining a capacitance density of 7.2 fF/m/sup 2/.

High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies

Two MIM capacitors with capacitance density of 11 and 0.48 fF/um2 were fabricated simultaneously using IBM-s 0.13 um SiGe 8 WL BiCMOS process. Results from DC parametric measurement indicate that these two capacitors compliment each other extremely well.

High Quality Passive Devices Fabricated Inexpensively in Advanced RF-CMOS Technologies with Copper BEOL

High quality factor inductors and highly matched low capacitance density horizontal parallel plate metal-insulator-metal capacitors were fabricated in 130nm RF-CMOS technology with minimal or zero processing step addition. The high quality factor inductors were made using a novel triple damascene integration technique. Peak quality factor of 26 was demonstrated for a 0.3nH inductor. The low capacitance density MIM capacitors were fabricated using standard BEOL copper planes with zero addition of processing steps. Capacitance density value of 0.66 fF/mum 2 was achieved for a six level copper wiring BEOL. Impact of copper plane was characterized to ensure optimal manufacturing production