Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Erik Sohmen is active.

Publication


Featured researches published by Erik Sohmen.


Proceedings of SPIE | 2014

Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Microfield Exposure Tool (MET)

Kevin Cummings; Dominic Ashworth; Mark Bremer; Rodney Chin; Yu-Jen Fan; Luc Girard; Holger Glatzel; Michael Goldstein; Eric M. Gullikson; Jim Kennon; Bob Kestner; Lou Marchetti; Patrick P. Naulleau; Regina Soufli; Johannes Bauer; Markus Mengel; Joachim Welker; Michael Grupp; Erik Sohmen; Stefan Wurm

In support of the Extreme Ultraviolet Lithography (EUVL) roadmap, a SEMATECH/CNSE joint program is underway to produce multiple EUVL (wavelength of 13.5 nm) R&D photolithography tools. The 0.5 NA projection optic magnification (5X), track length and mechanical interfaces match the currently installed 0.3 NA micro-field exposure tools (MET) projection optic [1] [2] [3]. Therefore, significant changes to the current tool platforms and other adjacent modules are not necessary. However, many of the existing systems do need upgrades to achieve the anticipated smaller exposure feature sizes [4]. To date we have made considerable progress in the production of the first of the two-mirror 0.5 NA projection optics for EUVL [5]. With a measured transmitted wave front error of less than 1 nm root mean square (RMS) over its 30 μm × 200 μm image field, lithography modeling shows that a predicted resolution of ≤12 nm and an ultimate resolution of 8 nm (with extreme dipole illumination) will be possible. This paper will present an update from the 0.5 NA EUVL program. We will detail the more significant activities that are being undertaken to upgrade the MET and discuss expected performance.


Proceedings of SPIE | 2010

Aerial image improvements on the Intel MET

Roman Caudillo; Todd R. Younkin; Steve Putna; Alan Myers; Yashesh Shroff; Terence Bacuita; Grant M. Kloster; Erik Sohmen

Since its installment in 2004, Intels extreme ultraviolet (EUV) micro-exposure tool (MET) has demonstrated significant improvements in ultimate resolution capability. Initially capable of printing 45nm half-pitch (HP) lines with a 160nm depth of focus (DOF), it is now capable of printing 22nm HP lines with up to a 275nm DOF and demonstrating modulation down to 18nm HP. Initial improvements in resolution have been chiefly attributable to the maturation of EUV masks and photoresists. Recent improvements that have enabled the 22nm HP imaging with a sizeable process window are largely due to new illumination options that have become available as a result of recent tool upgrades. In particular, the installation of a new nested Wolter collector with an additional outer shell that extended the maximum partial coherence (σ) from 0.55 to 0.68, in conjunction with an updated pupil wheel and apertures, has enabled new rotated quadrapole and on-axis dipole illumination settings with 0.36 inner σ and 0.68 outer σ. Here we present simulated contrast curves alongside the experimental imaging results for the Intel MET using the newly available quadrapole and on-axis dipole illumination settings and discuss our future plans for continued improvements to the Intel MET aerial image.


Proceedings of SPIE | 2013

Enhancing resolution with pupil filtering for projection printing systems with fixed or restricted illumination angular distribution

Greg McIntyre; Leon Teeuwen; Erik Sohmen; Obert Wood; Daniel Corliss; Theo van den Akker; Sander Bouten; Eelco van Setten; Oleg Voznyi; Sang-In Han; Hermann Bieg; Martin Burkhardt; Karen Petrillo; Zhengqing John Qi; Alexander Friz


Archive | 2003

Pre adjustment process for projection system for EUV lithography for microelectronics or microscopy uses pre adjusting wavelength differing from final wavelength

Steffen Fritzsche; Hans-Jürgen Mann; Erik Sohmen


Archive | 2011

Beleuchtungssystem sowie Projektionsobjektiv einer Maskeninspektionsanlage

Heiko Feldmann; Erik Sohmen; Joachim Stühler; Oswald Gromer; Ulrich Müller; Michael Layh; Markus Schwab


Archive | 2012

Illumination system and projection objective of a mask inspection apparatus

Heiko Feldmann; Erik Sohmen; Joachim Stuehler; Oswald Gromer; Ulrich Mueller; Michael Layh; Markus Schwab


Archive | 2006

Kompaktes 3-Spiegel-Objektiv

Hans-Jürgen Mann; Erik Sohmen


Archive | 2011

Position measuring device for light beam of microlithography-projection exposure system, has evaluation unit for receiving measured values of temperature sensors and for determining size and local position of light beam from measured values

Ulrich Müller; Axel Scholz; Thomas Schulze; Erik Sohmen


Archive | 2010

Lighting system and projection lens of a mask inspection system

Heiko Feldmann; Oswald Gromer; Michael Layh; Ulrich Müller; Markus Schwab; Erik Sohmen; Joachim Stühler


Archive | 2008

Lighting system used in microlithography installation, has folding mirrors arranged within range of intermediate image plane or field level for touching beam of light

Erik Sohmen

Collaboration


Dive into the Erik Sohmen's collaboration.

Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Researchain Logo
Decentralizing Knowledge