Eun-Jung Yun

Non-volatile memory device and method of fabricating the same

Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell

NEMS switch with 30 nm thick beam and 20 nm high air gap for high density non-volatile memory applications

3-dimensional flash memory device and method of fabricating the same

Methods of forming multi fin FETs using sacrificial fins and devices so formed

Multi-channel semiconductor device and method of manufacturing the same

Gate-all-around type of semiconductor device and method of fabricating the same

Semiconductor device including a crystal semiconductor layer, its fabrication and its operation

Semiconductor devices having field effect transistors

Multi-bit electro-mechanical memory device and method of manufacturing the same