Gokhan Bakan

Modeling of Thermoelectric Effects in Phase Change Memory Cells

Thermoelectric effects on phase change memory elements are computationally analyzed through 2-D rotationally symmetric finite-element simulations of reset operation on a Ge2Sb2Te5 (GST) mushroom cell with 10-nm critical dimension. Temperature-dependent material parameters are used to determine the thermoelectric contributions at the junctions (Peltier heat) and within GST (Thomson heat). Thermal boundary resistances at the GST interfaces enhance the Peltier heat contribution. Peak current densities and thermal gradients are in the order of 250 MA/cm2 and 50 K/nm. Overall, thermoelectric effects are shown to introduce significant voltage polarity dependence on the operation dynamics, peak temperatures, thermal gradients, volume of the molten region, energy required, and resistance contrast. Resistance contrasts of ~ 8.8 × 103 were realized with 155 μA for the positive polarity and 245 μA for the negative polarity.

High-temperature thermoelectric transport at small scales: Thermal generation, transport and recombination of minority carriers

Thermoelectric transport in semiconductors is usually considered under small thermal gradients and when it is dominated by the role of the majority carriers. Not much is known about effects that arise under the large thermal gradients that can be established in high-temperature, small-scale electronic devices. Here, we report a surprisingly large asymmetry in self-heating of symmetric highly doped silicon microwires with the hottest region shifted along the direction of minority carrier flow. We show that at sufficiently high temperatures and strong thermal gradients (~1 K/nm), energy transport by generation, transport and recombination of minority carriers along these structures becomes very significant and overcomes convective energy transport by majority carriers in the opposite direction. These results are important for high-temperature nanoelectronics such as emerging phase-change memory devices which also employ highly doped semiconducting materials and in which local temperatures reach ~1000 K and thermal gradients reach ~10–100 K/nm.

Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating

Nanocrystalline silicon microwires are self-heated through single, large amplitude, and microsecond voltage pulses. Scanning electron micrographs show very smooth wire surfaces after the voltage pulse compared to as-fabricated nanocrystalline texture. Voltage-pulse induced self-heating leads to significant conductance improvement, suggesting crystallization of the wires. The minimum resistivity during the pulse is extracted from wires of different dimensions as 75.0±4.6 μΩ cm, matching previously reported values for liquid silicon. Hence, nanocrystalline silicon microwires melt through self-heating during the voltage pulse and resolidify upon termination of the pulse, resulting in very smooth and less-resistive crystalline structures.

Fabrication of Supramolecular n/p-Nanowires via Coassembly of Oppositely Charged Peptide-Chromophore Systems in Aqueous Media

Fabrication of supramolecular electroactive materials at the nanoscale with well-defined size, shape, composition, and organization in aqueous medium is a current challenge. Herein we report construction of supramolecular charge-transfer complex one-dimensional (1D) nanowires consisting of highly ordered mixed-stack π-electron donor-acceptor (D-A) domains. We synthesized n-type and p-type β-sheet forming short peptide-chromophore conjugates, which assemble separately into well-ordered nanofibers in aqueous media. These complementary p-type and n-type nanofibers coassemble via hydrogen bonding, charge-transfer complex, and electrostatic interactions to generate highly uniform supramolecular n/p-coassembled 1D nanowires. This molecular design ensures highly ordered arrangement of D-A stacks within n/p-coassembled supramolecular nanowires. The supramolecular n/p-coassembled nanowires were found to be formed by A-D-A unit cells having an association constant (KA) of 5.18 × 105 M-1. In addition, electrical measurements revealed that supramolecular n/p-coassembled nanowires are approximately 2400 and 10 times more conductive than individual n-type and p-type nanofibers, respectively. This facile strategy allows fabrication of well-defined supramolecular electroactive nanomaterials in aqueous media, which can find a variety of applications in optoelectronics, photovoltaics, organic chromophore arrays, and bioelectronics.

Phase-change oscillations in silicon microwires

We have observed liquid-solid phase-change oscillations in 2–5.5 μm long silicon wires biased through a load resistor. Molten silicon resistivity is approximately 30 times lower than that of the room temperature solid-state resistivity of the highly doped nanocrystalline-silicon thin film used to fabricate the wires. Wires typically melt with 15–20 V electrical stresses, draining the parasitic capacitance introduced by the experimental setup within 1 μs. The power dissipated in the wire is not sufficient to keep it in molten state after the discharge, leading to repeated melting and resolidification of the wires with 1 MHz, 2–20 mA current oscillations.

Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures

Phase change memory is a non-volatile memory technology that utilizes the electrical resistivity contrast between resistive amorphous and conductive crystalline phases of phase change materials. These devices operate at high current densities and high temperature gradients which lead to significant thermoelectric effects. We have performed numerical modeling of electrothermal effects in p-type Ge2Sb2Te5 phase change memory structures suspended on TiN contact pads using COMSOL Multiphysics. Temperature dependent material parameters are used in the model. Strong asymmetry is observed in temperature profiles in all cases: the hottest spot appears closer to the higher potential end suggesting that the thermal profile can be significantly altered by the thermoelectric effects during device operation. Hence, thermoelectric effects need to be considered for device designs for lower power and higher reliability devices.

Measurements of Liquid Silicon Resistivity on Silicon Microwires

Nanocrystalline silicon microwires are self-heated through microsecond voltage pulses. Nonlinear changes in current level are observed during the voltage pulse, which end with melting

Comparison of instantaneous crystallization and metastable models in phase change memory cells

Phase change memory (PCM) is a possible competitor for future generation non-volatile storage class memory due to its fast writing speed and aggressively scaled packing density. In PCM cells current is confined through narrow conductive paths to create high current densities in a chalcogenide material (Ge2Sb2Te5 or GST is most commonly used). The resulting heat allows the material to switch between crystalline (set) and amorphous (reset) states, changing the cells resistance by ~10-104 times depending on the cell dimensions. Less energy is required for melting smaller regions, therefore aggressive cell scaling results in reduced power and increased packing density. The properties of GST change by orders of magnitude as a function of temperature, and thus understanding its thermal dependency is crucial to accurately model phase change memory cell operation.

Extraction of temperature dependent electrical resistivity and thermal conductivity from silicon microwires self-heated to melting temperature

Temperature-dependent electrical resistivity, ρ(T), and thermal conductivity, k(T), of nanocrystalline silicon microwires self-heated to melt are extracted by matching simulated current-voltage (I-V) characteristics to experimental I-V characteristics. Electrical resistivity is extracted from highly doped p-type wires on silicon dioxide in which the heat losses are predominantly to the substrate and the self-heating depends mainly on ρ(T) of the wires. The extracted ρ(T) decreases from 11.8 mΩ cm at room-temperature to 5.2 mΩ cm at 1690 K, in reasonable agreement with the values measured up to ∼650 K. Electrical resistivity and thermal conductivity are extracted from suspended highly doped n-type silicon wires in which the heat losses are predominantly through the wires. In this case, measured ρ(T) (decreasing from 20.5 mΩ cm at room temperature to 12 mΩ cm at 620 K) is used to extract ρ(T) at higher temperatures (decreasing to 1 mΩ cm at 1690 K) and k(T) (decreasing from 30 W m−1 K−1 at room temperature ...

Scaling of Silicon Phase-Change Oscillators

Scalability of silicon-based phase-change oscillators is investigated through experimental and computational studies. These relaxation oscillators are composed of a small volume of silicon, dc biased through a load resistor and a capacitor, which melts due to self-heating and resolidifies upon discharge of the load capacitor. These phase changes lead to high-amplitude current spikes with oscillation frequency that scales with supply voltage, RC time constant, power delivery condition, and heating and cooling rates of the wire. Experimental results are obtained from structures fabricated using silicon-on-insulator substrates. Scaling effects of various parameters are explored using 3-D finite-element simulations coupled with SPICE models.