Guillaume Levaufre

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

A Vision for Thermally Integrated Photonics Systems

Thermal management has traditionally been relegated to the last step in the design process. However, with the exponential growth in data traffic leading to ever-greater levels of component integration and ever-higher levels of energy consumption, thermal management is rapidly becoming one of the most critical areas of research within the ICT industry. Given the vast use of optics for efficient transmission of high-speed data, this paper focuses on a new thermal solution for cooling the components within pluggable optical modules. Thermally Integrated Photonics Systems (TIPS) represents a new vision for the thermal building blocks required to enable exponential traffic growth in the global telecommunications network. In the TIPS program, existing thermal solutions cannot scale to meet the needs of exponential growth in data traffic. The main barriers to enabling further growth were identified and a research roadmap was developed around a scalable and efficient integrated thermal solution. In particular, the effects of replacing inefficient materials and large macroTECs with better thermal spreaders and μTECs are investidated. In addition, new forms of μChannel cooling into the package to more efficiently remove the heat generated by the lasers and the TECs are being studied which can lead to future photonic devices that can be deployed in a vastly more dense and integrated manner to address the requirements of future telecommunication networks.

Direct Modulation of Hybrid-Integrated InP/Si Transmitters for Short and Long Reach Access Network

Recent progresses on hybrid InP/Si integration are presented for achieving high-performance tunable transmitters for cost-sensitive wavelength division multiplexing access networks. We demonstrate the generation of on-off keying non return to zero modulation format using several types of integrated directly modulated and tunable lasers. The use of the high output power hybrid silicon transmitter enables up to 28.5 dB optical budget at BER = 3.8 × 10-3 (in-band FEC assumed) under 10 Gb/s direct modulation over 25 and 50 km. Long-reach transmission over 100 km single-mode fiber is also demonstrated. Based on an enhanced modulation bandwidth hybrid laser, we successfully achieve 21.4 Gb/s direct modulation including FEC overhead on 12 wavelengths over a short-reach access link (10 km).

New Advances on Heterogeneous Integration of III–V on Silicon

Recent advances on hybrid III-V/Si lasers and semiconductor optical amplifiers using a wafer bonding technique are reported. In particular, III-V/Si lasers exhibiting C-band tuning range and high side-mode suppression ratio as well as high-gain semiconductor optical amplifiers are demonstrated.

Packaged hybrid III-V/silicon SOA

We present a hybrid III-V/silicon SOA, mounted in a planar package, with a fiber-to-fiber gain up to 10 dB, maximum internal gain of 28±2 dB, an internal noise figure of 10-11 dB and an output saturation power around 9 dBm.

Hybrid III-V Silicon Photonic Integrated Circuits for Optical Communication Applications

This paper summarizes recent advances of integrated hybrid InP/silicon-on-insulator lasers and transmitters based on a wafer bonding technique. First, directly modulated hybrid III-V/Si tunable lasers integrated with an external ring resonator filter are demonstrated, enabling the improvement of the dynamic extinction ratio. An efficient tunable filter is then reported mainly for access applications. Finally, results on integrated distributed feedback laser and electro-absorption modulator at 1.3 μm are presented, showing the capability of operation up to 32 Gb/s. Meanwhile, an integrated tunable laser with an electro-absorption modulator is demonstrated at 1.5 μm, exhibiting excellent bit-error-rate performance at 10 Gb/s.

50km Error free transmission of fully integrated chirp-managed 10Gb/s directly modulated C-band tunable III-V/SOI hybrid lasers

10Gb/s directly modulated tunable lasers, integrating chirp management ring resonators, have been designed and fabricated using wafer bonding. Using such a device, we demonstrated error-free transmission over 50km single mode fiber.

Towards AlN optical cladding layers for thermal management in hybrid lasers

Aluminium Nitride (AlN) is proposed as a dual function optical cladding and thermal spreading layer for hybrid ridge lasers, replacing current benzocyclobutene (BCB) encapsulation. A high thermal conductivity material placed in intimate contact with the Multi-Quantum Well active region of the laser allows rapid heat removal at source but places a number of constraints on material selection. AlN is considered the most suitable due to its high thermal conductivity when deposited at low deposition temperatures, similar co-efficient of thermal expansion to InP, its suitable refractive index and its dielectric nature. We have previously simulated the possible reduction in the thermal resistance of a hybrid ridge laser by replacing the BCB cladding material with a material of higher thermal conductivity of up to 319 W/mK. Towards this goal, we demonstrate AlN thin-films deposited by reactive DC magnetron sputtering on InP.

Hybrid III-V/silicon tunable laser directly modulated at 10Gbit/s for short reach/access networks

We achieve 10Gbit/s transmissions using NRZ direct modulation on a hybrid III-V on Silicon laser. The device is fabricated by wafer-scale molecular bonding and exhibits a bit error rate less than 10-4 up to 40km reach and a wavelength tunability over 35nm.