Stéphane Malhouitre

New Advances on Heterogeneous Integration of III–V on Silicon

Recent advances on hybrid III-V/Si lasers and semiconductor optical amplifiers using a wafer bonding technique are reported. In particular, III-V/Si lasers exhibiting C-band tuning range and high side-mode suppression ratio as well as high-gain semiconductor optical amplifiers are demonstrated.

Packaged hybrid III-V/silicon SOA

We present a hybrid III-V/silicon SOA, mounted in a planar package, with a fiber-to-fiber gain up to 10 dB, maximum internal gain of 28±2 dB, an internal noise figure of 10-11 dB and an output saturation power around 9 dBm.

Hybrid III-V Silicon Photonic Integrated Circuits for Optical Communication Applications

This paper summarizes recent advances of integrated hybrid InP/silicon-on-insulator lasers and transmitters based on a wafer bonding technique. First, directly modulated hybrid III-V/Si tunable lasers integrated with an external ring resonator filter are demonstrated, enabling the improvement of the dynamic extinction ratio. An efficient tunable filter is then reported mainly for access applications. Finally, results on integrated distributed feedback laser and electro-absorption modulator at 1.3 μm are presented, showing the capability of operation up to 32 Gb/s. Meanwhile, an integrated tunable laser with an electro-absorption modulator is demonstrated at 1.5 μm, exhibiting excellent bit-error-rate performance at 10 Gb/s.

50km Error free transmission of fully integrated chirp-managed 10Gb/s directly modulated C-band tunable III-V/SOI hybrid lasers

10Gb/s directly modulated tunable lasers, integrating chirp management ring resonators, have been designed and fabricated using wafer bonding. Using such a device, we demonstrated error-free transmission over 50km single mode fiber.

Hybrid III-V/Silicon SOA in Optical Network Based on Advanced Modulation Formats

A hybrid III-V/silicon semiconductor optical amplifier (SOA) is presented, which shows a maximum fiber-to-fiber gain of 10 dB and a maximum internal gain around 28 ± 2 dB. The device was fabricated from III-V material wafer-bonded onto a silicon-on-insulator wafer. The optical mode transfers between silicon and III-V waveguides by means of waveguide tapers. Vertical grating couplers are used to connect the SOA to optical fibers. The device was packaged and tested in a transmission experiment. In a loop configuration containing 25 km of single-mode fiber, the SOA amplifies data signals of various modulation formats. Transmission with a bit error rate below the forward error correction limit is demonstrated for up to ten loops using QPSK, six loop using 8QAM, and four loops using 16QAM.

Hybrid III-V/silicon tunable laser directly modulated at 10Gbit/s for short reach/access networks

We achieve 10Gbit/s transmissions using NRZ direct modulation on a hybrid III-V on Silicon laser. The device is fabricated by wafer-scale molecular bonding and exhibits a bit error rate less than 10-4 up to 40km reach and a wavelength tunability over 35nm.

Transmission over 50km at 10Gbs/s with a hybrid III-V on silicon integrated tunable laser and electro-absorption modulator

We demonstrate a tunable transmitter, integrating a III-V/Si laser and electro-absorption modulator. This transmitter exhibits a 10nm wavelength tunability and shows error free transmission up to 50km at 10.3Gb/s.

Hybrid III-V/silicon lasers

We report on hybrid III-V on Silicon lasers with adiabatic coupling. Fabry-Pérot laser with 16mW output power, integrated racetrack laser and photodetector, as well as widely tunable laser with 45nm tuning range are presented.

A fully packaged 25 Gbps/channel WDM photoreceiver module based on a Silicon Photonic Integrated Circuit and a flip-chipped CMOS quad transimpedance amplifier

Growing demand for bandwidth in Datacom optical links and High Performance Computers (HPC) has recently led to new optoelectronic modules based on Silicon Photonics Integrated Circuits [1]. One of the intrinsic capabilities of this technology is its scalability in terms of aggregated data rate, due to the possibility of combining Space Division Multiplexing, Wavelength Division Multiplexing, and the use of advanced modulation formats such as PAM4 or QPSK [2]. As a result, standard commercial modules using Silicon Photonics Integrated Circuits (Si-PIC), typically providing 10 to 25 Gbps (OOK) per channel over several singlemode fibers, will evolve up to and beyond 400 Gbps and more aggregated data rate in the coming years. In this paper, we demonstrate the introduction of Wavelength Division Multiplexing in a multichannel photoreceiver module using a Si-PIC, at a data rate of 25 Gbps per channel.

Applications of hybrid III–V on Silicon devices in optical fiber networks

Recent progress on hybrid integration of III-V on Silicon devices using wafer bonding is presented focusing on hybrid tunable lasers and their applications for the next generation of access, metropolitan and long haul optical networks.