Nils Girard

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

Hybrid III-V on silicon lasers for photonic integrated circuits on silicon

This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.

New Advances on Heterogeneous Integration of III–V on Silicon

Recent advances on hybrid III-V/Si lasers and semiconductor optical amplifiers using a wafer bonding technique are reported. In particular, III-V/Si lasers exhibiting C-band tuning range and high side-mode suppression ratio as well as high-gain semiconductor optical amplifiers are demonstrated.

Packaged hybrid III-V/silicon SOA

We present a hybrid III-V/silicon SOA, mounted in a planar package, with a fiber-to-fiber gain up to 10 dB, maximum internal gain of 28±2 dB, an internal noise figure of 10-11 dB and an output saturation power around 9 dBm.

Hybrid III-V Silicon Photonic Integrated Circuits for Optical Communication Applications

This paper summarizes recent advances of integrated hybrid InP/silicon-on-insulator lasers and transmitters based on a wafer bonding technique. First, directly modulated hybrid III-V/Si tunable lasers integrated with an external ring resonator filter are demonstrated, enabling the improvement of the dynamic extinction ratio. An efficient tunable filter is then reported mainly for access applications. Finally, results on integrated distributed feedback laser and electro-absorption modulator at 1.3 μm are presented, showing the capability of operation up to 32 Gb/s. Meanwhile, an integrated tunable laser with an electro-absorption modulator is demonstrated at 1.5 μm, exhibiting excellent bit-error-rate performance at 10 Gb/s.

Dynamics of Hybrid III-V Silicon Semiconductor Lasers for Integrated Photonics

The dynamics of hybrid III-V/Si lasers are studied for the first time under a combination of two optical feedbacks. A cleaved fiber placed about 20 μm away from the laser creates a short feedback cavity. The effect of this short feedback is studied on a Fabry-Perot laser and reveals the sensitivity of the device to such perturbation, as well as the presence of sub-cavities in the Si waveguides. The dynamics of the laser subjected to additional feedback from a 70-m fiber cavity show that the long-feedback dynamics are governed by the sub-cavities. This behavior is confirmed using a complex tunable III-V/Si laser.

Transmission over 50km at 10Gbs/s with a hybrid III-V on silicon integrated tunable laser and electro-absorption modulator

We demonstrate a tunable transmitter, integrating a III-V/Si laser and electro-absorption modulator. This transmitter exhibits a 10nm wavelength tunability and shows error free transmission up to 50km at 10.3Gb/s.

Hybrid III-V/silicon lasers

We report on hybrid III-V on Silicon lasers with adiabatic coupling. Fabry-Pérot laser with 16mW output power, integrated racetrack laser and photodetector, as well as widely tunable laser with 45nm tuning range are presented.

Applications of hybrid III–V on Silicon devices in optical fiber networks

Recent progress on hybrid integration of III-V on Silicon devices using wafer bonding is presented focusing on hybrid tunable lasers and their applications for the next generation of access, metropolitan and long haul optical networks.

Hybrid III-V/silicon SOA for photonic integrated circuits

Silicon photonics has reached a considerable level of maturity, and the complexity of photonic integrated circuits (PIC) is steadily increasing. As the number of components in a PIC grows, loss management becomes more and more important. Integrated semiconductor optical amplifiers (SOA) will be crucial components in future photonic systems for loss compensation. In addition, there are specific applications, where SOAs can play a key role beyond mere loss compensation, such as modulated reflective SOAs in carrier distributed passive optical networks or optical gates in packet switching. It is, therefore, highly desirable to find a generic integration platform that includes the possibility of integrating SOAs on silicon. Various methods are currently being developed to integrate light emitters on silicon-on-insulator (SOI) waveguide circuits. Many of them use III-V materials for the hybrid integration on SOI. Various types of lasers have been demonstrated by several groups around the globe. In some of the integration approaches, SOAs can be implemented using essentially the same technology as for lasers. In this paper we will focus on SOA devices based on a hybrid integration approach where III-V material is bonded on SOI and a vertical optical mode transfer is used to couple light between SOI waveguides and guides formed in bonded III-V semiconductor layers. In contrast to evanescent coupling schemes, this mode transfer allows for a higher confinement factor in the gain material and thus for efficient light amplification over short propagation distances. We will outline the fabrication process of our hybrid components and present some of the most interesting results from a fabricated and packaged hybrid SOA.