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Dive into the research topics where Haruhito Ono is active.

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Featured researches published by Haruhito Ono.


Journal of Vacuum Science & Technology B | 2007

Position measurement method for alignment in UV imprint using a high index mold and “electronic” moiré technique

Nobuhito Suehira; Atsunori Terasaki; Shingo Okushima; Junichi Seki; Haruhito Ono; Hideki Ina

In UV imprint, positioning errors can occur between a mold and a wafer due to pressure when there is a contact with the UV resin. The moire technique, which is produced by superimposition of two gratings, is a well-known and simple method for high-resolution position measurement. However, the authors believe that a direct observation of two separate gratings is more appropriate for higher positioning accuracy. Here they propose a new method for the position measurement, which obtains “electronic” moire fringes by combining the images of two separate gratings from different areas of the mold and the wafer. The fundamental detection error was σ=0.15nm. The repeatabilities of the total system was σ=0.68nm in air and σ=0.73nm in resin. The linearity of the measurement value to control signal was R2=0.97.


Japanese Journal of Applied Physics | 2007

Fabrication of Three-Dimensional Photonic Crystal Device for Terahertz Wave

Kenji Tamamori; Toshihiko Ouchi; Takeaki Itsuji; Shinan Wang; Ryoji Kurosaka; Haruhito Ono

We have fabricated a simple-cubic-lattice photonic crystal (PhC) device based on high-resistivity silicon in the terahertz (THz) range by micro-electro-mechanical system (MEMS) techniques. The lattice constant of the three-dimensional (3D) PhC device is 120 µm, resulting in a photonic band gap (PBG) centered at 1 THz. The 3D PhC device was constructed by stacking ten 120-µm-thick chips with periodic pillars and holes patterned respectively on both of their sides by Si deep reactive ion etching. By THz time-domain spectroscopy, the PBG of the device was observed between 0.83 and 1.17 THz in the Γ–Z direction with a transmittance attenuation of about 35 dB, which is in good agreement with a numerical calculation result.


international microprocesses and nanotechnology conference | 2007

Investigation of Dual-Focal-Points Optical System with Bright-Field Illumination and Image Processing for UV Nanoimprint Alignment

Nobuhito Suehira; Atsunori Terasaki; Shingo Okushima; Junichi Seki; Haruhito Ono

In this study, a new wide-gap alignment technique was developed for the investigation of dual-focal-points optical system with bright field illumination and image processing for UV nanoimprint.


Archive | 1995

Multi-electron beam source and image display device using the same

Hidetoshi Suzuki; Ichiro Nomura; Tetsuya Kaneko; Haruhito Ono


Archive | 2001

Electrooptic system array, charged-particle beam exposure apparatus using the same, and device manufacturing method

Haruhito Ono; Masato Muraki


Archive | 1990

Electron-beam generator and image display apparatus making use of it

Ichiro Nomura; Toshihiko Takeda; Yoshikazu Banno; Tetsuya Kaneko; Haruhito Ono; Hidetoshi Suzuki


Archive | 1988

Surface conduction electron-emitting device

Akira Shimizu; Hidetoshi Suzuki; Masahiko Okunuki; Haruhito Ono; Ichiro Nomura; Yoshikazu Banno; Toshihiko Takeda; Tetsuya Kaneko


Archive | 2001

Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method

Yasuhiro Shimada; Takayuki Yagi; Haruhito Ono


Archive | 2004

Deflector, method of manufacturing deflector, and charged particle beam exposure apparatus using deflector

Haruhito Ono; Masatake Akaike; Kenji Tamamori; Futoshi Hirose; Yasushi Koyama; Atsunori Terasaki; Kenichi Nagae; Yoshinori Nakayama


Archive | 2001

Charged-particle beam exposure apparatus and device manufacturing method

Hiroshi Maehara; Haruhito Ono; Yasuhiro Shimada; Takayuki Yagi

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