Hee-sook Park

Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same

Method of forming a gate of a semiconductor device

Method of cleaning a chemical vapor deposition chamber

Gate and method of forming the same, and memory device and method of manufacturing the same

Method for forming contact having low resistivity using porous plug and method for forming semiconductor devices using the same

Gate structures in semiconductor devices

Interlayered dielectric layer of semiconductor device and method of manufacturing the same

Multi-layered dielectric layer including insulating layer having Si-CH3 bond therein and method for fabricating the same

Semiconductor devices having polymetal gate electrodes and methods of manufacturing the same

Methods of forming cobalt silicide contact structures including sidewall spacers for electrical isolation and contact structures formed thereby