Helmut Tews
IBM
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Publication
Featured researches published by Helmut Tews.
Applied Physics Letters | 2002
Cheruvu S. Murthy; K. Y. Lee; Rajesh Rengarajan; Omer H. Dokumaci; Paul Ronsheim; Helmut Tews; Satoshi Inaba
Studies of both systematic experiments and detailed simulations for examining the effects of N2+ implant on channel dopants are described. Step-by-step monitor wafer experiments have clearly confirmed the nitrogen-induced transient enhanced diffusion (TED) of dopants. Process simulations within the “+1” N2+ profile approach have demonstrated the need to scale down the +1 model parameter for matching the measured depth profiles. The underlying mechanism for the reduced +1 model parameter is that nitrogen which diffuses toward the Si surface becomes a sink for the interstitials. These combined studies also show that nitrogen-induced TED of dopants increases with N2+ dose.
Archive | 2001
Helmut Tews; Oleg Gluschenkov; Mary E. Weybright
Archive | 1999
Helmut Tews; Alexander Michaelis; Stephan Kudelka; Uwe Schroeder; Raj Jammy; Ulrike Gruening
Archive | 2000
Rama Divakaruni; Stephan Kudelka; Helmut Tews; Irene McStay; K. Y. Lee; Uwe Schroeder
Archive | 2000
Ramachandra Divakaruni; Jack A. Mandelman; Wolfgang Bergner; Gary B. Bronner; Ulrike Gruening; Stephan Kudelka; Alexander Michaelis; Larry Alan Nesbit; Carl J. Radens; Till Schloesser; Helmut Tews
Archive | 2000
Johnathan E. Faltermeier; Ulrike Gruening; Suryanarayan G. Hegde; Rajarao Jammy; Brian S. Lee; Helmut Tews
Archive | 2001
Michael P. Chudzik; Oleg Gluschenkov; Raj Jammy; Uwe Schroeder; Helmut Tews
Archive | 2000
Ulrike Gruening; Rajarao Jammy; Helmut Tews
Archive | 2003
Helmut Tews; Stephan Kudelka; Uwe Schroeder; Rolf Weis
Archive | 2001
Michael P. Chudzik; Johnathan E. Faltermeier; Rajarao Jammy; Stephan Kudelka; Irene McStay; Kenneth T. Settlemyer; Helmut Tews
