Hirofumi Watatani
Fujitsu
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Publication
Featured researches published by Hirofumi Watatani.
MRS Proceedings | 2008
Kazuya Okubo; Kazuo Kawamura; Shinich Akiyama; Yasutoshi Kotaka; Tsukasa Itani; Hirofumi Watatani; Kenichi Yanai; Masafumi Nakaishi; Masataka Kase
We report NiSi and Ni(Pt)Si films with excellent thermal stability showing a particular crystal orientation on Si(001). The Ni-silicide film with a deposition temperature of about 200 °C consists of a conformal domain structure. We examined detail crystallographic analysis of silicide and clarified the psudo-epitaxial growth of NiSi(202)//Si(220) [or NiSi(211)//Si(220)] was the key scheme of superior thermal stability. By using this optimized Ni-silicide formation process, we have fabricated Ni-silicide that is thermally stable up to 650 °C and shows low fluctuation in sheet resistance and low leakage current in electrical measurements. This process is a promising candidate for future silicidation technology.
Archive | 2006
Hirofumi Watatani; Ken Sugimoto
Archive | 2002
Hirofumi Watatani
Archive | 2005
Tamotsu Owada; Shun-ichi Fukuyama; Hirofumi Watatani; Kengo Inoue; Atsuo Shimizu
Archive | 1994
Hirofumi Watatani; Masahiko Doki; Shoji Okuda; Junya Nakahira; Hideaki Kikuchi
Archive | 2003
Takashi Suzuki; Satoshi Otsuka; Tsutomu Hosoda; Hirofumi Watatani; Shun-ichi Fukuyama
Archive | 2002
Hirofumi Watatani
Archive | 1999
Hirofumi Watatani
Archive | 2007
Tamotsu Owada; Hirofumi Watatani; Ken Sugimoto; Shun-ichi Fukuyama
Archive | 2010
Sadahiro Kishii; Hirofumi Watatani; Masanori Terahara; Ryo Tanabe; Kaina Suzuki; Shigeo Satoh
