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Featured researches published by Ho-young Song.


IEEE Journal of Solid-state Circuits | 2008

An 80 nm 4 Gb/s/pin 32 bit 512 Mb GDDR4 Graphics DRAM With Low Power and Low Noise Data Bus Inversion

Seung-Jun Bae; Kwang-Il Park; Jeong-Don Ihm; Ho-young Song; Woo-Jin Lee; Hyun-Jin Kim; Kyoung-Ho Kim; Yoon-Sik Park; Min-Sang Park; Hong-Kyong Lee; Sam-Young Bang; Gil-Shin Moon; Seok-won Hwang; Young-Chul Cho; Sang-Jun Hwang; Dae-Hyun Kim; Ji-Hoon Lim; Jae-Sung Kim; Sung-Hoon Kim; Seong-Jin Jang; Joo Sun Choi; Young-Hyun Jun; Kinam Kim; Soo-In Cho

4 Gb/s/pin 32 bit 512 Mb GDDR4 (Graphics Double Data Rate 4) SDRAM was implemented by using an 80 nm CMOS process. It employs a data bus inversion (DBI) coding to overcome the bottleneck of a parallel single-ended signaling, a power consumption of I/O, power supply noise, and crosstalk. Both DBI AC and DC modes are combined to a single circuit by eliminating the feedback path of a conventional DBI AC circuit while achieving high-speed operation. The proposed DBI circuit uses an analog majority voter insensitive to mismatch for small area and delay. Ronmiddot tuning further improves the voltage and time margin by adding a user-supplied offset to auto-calibrated Ronmiddot. In addition, a dual duty cycle corrector (DCC) is used to reduce duty error and jitter by averaging two outputs of two DCCs. Measured results show that DBI DC coding reduces the peak-to-peak jitter from 65.5 ps to 44.5 ps and the voltage fluctuation from 183 mV to 115 mV at the data rate of 4 Gb/s with the 2 V.


international solid-state circuits conference | 2007

An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion

Jeong-Don Ihm; Seung-Jun Bae; Kwang-Il Park; Ho-young Song; Woo-Jin Lee; Hyun-Jin Kim; Kyoung-Ho Kim; Ho-Kyung Lee; Min-Sang Park; Sam-Young Bang; Mi-Jin Lee; Gil-Shin Moon; Young-wook Jang; Suk-Won Hwang; Young-Chul Cho; Sang-Jun Hwang; Dae-Hyun Kim; Ji-Hoon Lim; Jae-Sung Kim; Su-Jin Park; Ok-Joo Park; Se-Mi Yang; Jin-Yong Choi; Youngwook Kim; Hyun-Kyu Lee; Sung-Hoon Kim; Seong-Jin Jang; Young-Hyun Jun; Soo-In Cho

A 4Gb/s/pin 32b parallel 512Mb GDDR4 SDRAM is implemented in an 80nm DRAM process. It employs a data-bus inversion coding scheme with an analog majority voter insensitive to mismatch, which reduces peak-to-peak jitter by 21 ps and voltage fluctuation by 68mV. A dual duty-cycle corrector is proposed to average duty error, and tuning is added to the auto-calibration of driver and termination impedance.


international solid-state circuits conference | 2001

Digitally-controlled DLL and I/O circuits for 500 Mb/s/pin /spl times/16 DDR SDRAM

Jung-Bae Lee; Kyu-hyoun Kim; Changsik Yoo; Sang-Bo Lee; One-Gyun Na; Chan-Yong Lee; Ho-young Song; Jong-Soo Lee; Zi-Hyoun Lee; Ki-Woong Yeom; Hoi-Joo Chung; Il-won Seo; Moo-Sung Chae; Yun-Ho Choi; Soo-In Cho

DLL and improved I/O circuits are for 500 Mb/s/pin DDR SDRAM. This digitally-controlled DLL has inherent duty cycle correction capability, enabling fast re-locking upon standby-mode exit. Data input circuits, such as internal delay control and digital sense amplifier, reduce setup/hold window to 0.3 ns. The output data driver has 62% decreased pattern-dependent skew.


Archive | 2005

Latency control circuit and method of latency control

Sang-Bo Lee; Ho-young Song


Archive | 2004

Seminconductor integrated circuit with termination circuit

Ho-young Song


Archive | 2002

On-chip termination apparatus in semiconductor integrated circuit, and method for controlling the same

Ho-young Song; Seong-Jin Jang


Archive | 2015

Device and method for repairing memory cell and memory system including the device

Kyo-Min Sohn; Ho-young Song; Sang-joon Hwang; Cheol Saeng Kim; Dong-Hyun Sohn


Archive | 2010

Memory system, memory device, and output data strobe signal generating method

Kwang-Il Park; Seong-Jin Jang; Ho-young Song


Archive | 2008

Semiconductor memory device and latency signal generating method thereof

Kwang-II Park; Young-Hyun Jun; Seong-Jin Jang; Ho-young Song


Archive | 2002

Circuit and method for calibrating resistors for active termination resistance, and memory chip having the circuit

Ho-young Song

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