Hyeoung-Won Seo

Semiconductor devices having transistors with vertical channels and method of fabricating the same

Semiconductor memory device with vertical channel transistor and method of fabricating the same

Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same

Semiconductor device having vertical transistor and method of fabricating the same

Method of fabricating fin field effect transistor using isotropic etching technique

Semiconductor Device Having Buried Word Line Interconnects and Method of Fabricating the Same

Asymmetric MOS transistor with trench-type gate

Recess type MOS transistor and method of manufacturing same

Semiconductor devices having a vertical channel transistor and methods of forming the same

Field effect transistor device with channel fin structure and method of fabricating the same