Ikuo Yoshida

Improvement of hardness of MOS capacitors to electron-beam irradiation and hot-electron injection by ultradry oxidation of silicon

The sensitivity to electron-beam-induced damage and to hot-electron-induced damage of metal/SiO/sub 2//Si capacitors has been improved by using ultradry oxide. The ultradry oxide was grown in a double-walled quartz furnace in which water concentration was reduced to less than 1 p.p.m. The interface trap generation in ultradry MOS capacitors due to electron beams is nearly one order of magnitude smaller than that in conventional dry MOS capacitors. Interface trap generation in ultradry MOS capacitors caused by hot electrons is half of that in dry MOS capacitors.<<ETX>>

Effects of oxide‐trapped charges and interface trap generation in metal/oxide/semiconductor structures with ultradry oxides after Fowler–Nordheim stressing

The effects of charge trapping and interface trap generation in fully processed metal/oxide/semiconductor (MOS) structures with wet, dry, and ultradry oxides are investigated. This is done by measuring the electrical properties of MOS capacitors with these oxides after Fowler–Nordheim electron injection stress. The data show that ultradry oxides have more hole traps than the other two. In addition, the generation of interface traps and electron traps is smaller in the ultradry oxides than in the other two.