James W. Howard

Current single event effects and radiation damage results for candidate spacecraft electronics

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, proton-induced damage, and total ionizing dose. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and DC-DC converters, among others.

Compendium of Current Single Event Effects Results for Candidate Spacecraft Electronics for NASA

Sensitivity of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is presented. Devices tested include digital, linear, and hybrid devices.

Comparison of single-event transients induced in an operational amplifier (LM124) by pulsed laser light and a broad beam of heavy ions

A comparison of single-event transients (SETs) from heavy-ion and pulsed-laser irradiation of the LM124 operational amplifier shows good agreement for different voltage configurations. The agreement is illustrated by comparing both individual transient shapes and plots of transient amplitude versus width.

Pulsed-laser testing methodology for single event transients in linear devices

A methodology for testing linear devices for single event transients that uses a pulsed laser to supplement a heavy-ion accelerator is proposed. The method is based on an analysis of plots of transient amplitudes versus width over a range of laser pulse input energies and heavy-ion LETs. Additional data illustrating the method are presented that include the dependence of SETs on circuit configuration in a comparator (LM111) and operational amplifier (LM124). If judiciously used, the methodology has the advantage that the amount of heavy-ion accelerator testing can be reduced.

Investigation of millisecond-long analog single-event transients in the LM6144 op amp

A new category of analog single-event transients (SETs) with millisecond-long durations have been experimentally observed in the LM6144 operational amplifier. It is the first time that events with such extreme widths are under investigation in a linear integrated circuit. Relying on heavy-ion broadbeam tests, picosecond pulsed lasers diagnostics, and computer-assisted circuit modeling, we uncover the mechanisms and causes of these anomalous voltage transients. The identification of the problematic area of the IC reveals that the bias/startup circuitry is sensitive to energetic ionizing particles and can be responsible for corrupted circuit operations when subjected to a heavy-ion strike. A circuit hardening solution with minimal impact on the layout and the electrical performances of the op amp are proposed to mitigate this effect.

Compendium of Current Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices

Development of a test methodology for single-event transients (SETs) in linear devices

We present single-event transient (SET) test data on linear devices under many operational conditions in an attempt to understand the SET generation and characteristics. This is done in an attempt to define a low-cost conservative test methodology to characterize these effects. Heavy ion and laser irradiation test results are reported for a variety of bipolar analog integrated circuits.

TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory

Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiCh), with a tractable soft error rate of about 10-12 errors/bit-day, for the Adams ten percent worst case environment.

A compendium of single event transient data

We present a compendium on observed Single Event Transients on analog and digital circuits. Both the data and the test methods used are presented.

Proton single event effects (SEE) testing of the Myrinet crossbar switch and network interface card

As part of the Remote Exploration and Experimentation Project (REE), work was performed to do a proton SEE evaluation of the Myricom, Inc. network protocol system (Myrinet). This testing included the evaluation of the Myrinet crossbar switch and the network interface card (NIC). To this end, two crossbar switch devices and five components on the NIC were exposed to the proton beam at the University of California at Davis Crocker Nuclear Laboratory (CNL). Official description of the Myrinet standard appears in its entirety in an ANSI document (ANSI/VITA 26-1998, Nov. 2, 1998).