Martin A. Carts

Current single event effects and radiation damage results for candidate spacecraft electronics

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, proton-induced damage, and total ionizing dose. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, analog-to-digital converters (ADCs), digital-to-analog converters (DACs), and DC-DC converters, among others.

Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits

Shift registers featuring radiation-hardening-by-design (RHBD) techniques are realized in IBM 8HP SiGe BiCMOS technology. Both circuit and device-level RHBD techniques are employed to improve the overall SEU immunity of the shift registers. Circuit-level RHBD techniques include dual-interleaving and gated-feedback that achieve SEU mitigation through local latch-level redundancy and correction. In addition, register-level RHBD based on triple-module redundancy (TMR) versions of dual-interleaved and gated-feedback cell shift registers is also realized to gauge the performance improvement offered by TMR. At the device-level, RHBD C-B-E SiGe HBTs with single collector and base contacts and significantly smaller deep trench-enclosed area than standard C-B-E-B-C devices with dual collector and base contacts are used to reduce the upset sensitive area. The SEU performance of these shift registers was then tested using heavy ions and standard bit-error testing methods. The results obtained are compared to the unhardened standard shift register designed with CBEBC SiGe HBTs. The RHBD-enhanced shift registers perform significantly better than the unhardened circuit, with the TMR technique proving very effective in achieving significant SEU immunity

Proton-induced transients in optocouplers: in-flight anomalies, ground irradiation test, mitigation and implications

We present data on recent optocoupler in-flight anomalies and the subsequent ground test irradiation performed. Discussions of the single event mechanisms involved, transient filtering analysis, and design implications are included. Proton-induced transients were observed on higher speed optocouplers with a unique dependence on the incidence particle angle. The results indicate that both direct ionization and nuclear reaction-related mechanisms are responsible for the single events observed.

Compendium of Current Single Event Effects Results for Candidate Spacecraft Electronics for NASA

Sensitivity of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is presented. Devices tested include digital, linear, and hybrid devices.

Recent radiation damage and single event effect results for candidate spacecraft electronics

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.

Recent radiation damage and single event effect results for microelectronics

We present heavy ion and proton single event effects (SEE) as well as radiation damage ground test results for candidate spacecraft electronics. Microelectronics tested include digital, analog, and hybrid devices.

A compendium of recent optocoupler radiation test data

We present a compendium of optocoupler radiation test data including data on neutron, proton and heavy ion displacement damage (DD), single event transients (SET) and degradation due to total ionizing dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.

Total dose and single event effects testing of the Intel pentium III (P3) and AMD K7 microprocessors

To understand the radiation sensitivity and radiation response, Intel Pentium III and AMD K7 microprocessors were tested for total ionizing dose and single event effects. The processors have been found to be extremely tolerant to total ionizing dose and no radiation-induced latchups have been observed with protons or heavy ions to an LET of approximately 15 MeV-cm/sup 2//mg. Single event upset and functional interrupts have been observed for both protons and heavy ions.

A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations

This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions.

Compendium of Current Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices