Jang-Gn Yun

Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

Various critical issues related with 3-D stacked nand Flash memory are examined in this paper. Our single-crystalline STacked ARray (STAR) has many advantages such as better scalability, possibility of single-crystal channel, less sensitivity to 3-D interference, stable virtual source/drain characteristic, and more extendability over other stacked structures. With STAR, we proposed a unit 3-D structure, i.e., “building.” Then, using this new component, 3-D block and full chip architecture are successfully designed. For the first time, the structure and operation methods of the “full” array are considered. The fully designed 3-D nand Flash architecture will be the novel solution of reliable 3-D stacked nand Flash memory for terabit density.

Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory

In this paper, a 3-D NAND Flash memory array having multiple single-crystal Si nanowires is investigated. Device structure and fabrication process are described including the electrical isolation of stacked nanowires. Numerical simulation results focused on NAND Flash memory operation are delivered. Devices and array with stacked bit lines are fabricated, and memory characteristics such as program/erase select gate operation are measured. Array scheme is also discussed for the high-density bit-cost scalable 3-D stacked bit-line NAND Flash memory application.