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Dive into the research topics where Jeanne P. Bickford is active.

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Featured researches published by Jeanne P. Bickford.


IEEE Transactions on Semiconductor Manufacturing | 2016

Deep Trench Capacitor in Three Dimensional Through Silicon via Keepout Area for Electrostatic Discharge Protection

Nazmul Habib; Mujahid Muhammad; Jeanne P. Bickford; John Safran; Ahmed Y. Ginawi; Fred Towler

To fully enable and leverage the power of advanced processors, products must have abundant cache memory with much shorter access paths without increasing chip size. This requires growing products in the z-direction by building stacked chips (3-D chips). To optimize 3-D product costs, the area consumed by other processing requirements such as electrostatic discharge (ESD) protection needs to be as efficient as possible. Placing ESD structures made with deep trench capacitors in 3-D through silicon via keepout areas optimizes silicon area since these structures enable placement of ESD devices in space that would otherwise not be used.


international convention on information and communication technology electronics and microelectronics | 2017

Terminal metal inspection yield improvement

Jeanne P. Bickford

Power grids are designed with built in redundancy, but because of reliability concerns associated with the possibility that parts of the product power grid could require maximum current which would be constrained if any terminal metal connection is defective, all terminal metal connections in every product die are required to have 100% fully compliant terminal metal connections. The innovative method described in this paper applies an assessment of the amount of current carried by each terminal metal connection in the product die to create a map that identifies which terminal metal could be allowed to be defective and maintain product reliability and functionality. Application of this method at terminal metal connection defect inspection improves yield by taking advantage of power grid redundancy. The method identifies current carrying requirements for each TMC and creates a unique product terminal metal inspection map.


advanced semiconductor manufacturing conference | 2016

Recovering from a yield excursion: A simulated case study

Jeanne P. Bickford; Allison Rose Bannister

Deciding when to update parameter file or floorplan yield assumptions is key to minimizing the cost impact associated with a yield excursion. Applying a yield degrade too soon creates excess inventory and applying a yield degrade too late increases the probability of missing shipments. A simulated case study is presented to aid product engineers, manufacturing engineers, and program managers in the determination of supply impacts as a function of when the yield degrade is applied. Impact is explored for both high volume and low volume products.


Archive | 2017

Threshold voltage (VT)-type transistor sensitive and/or fan-out sensitive selective voltage binning

Jeanne P. Bickford; John R. Goss; Robert McMahon; Troy Perry; Thomas G. Sopchak


Archive | 2017

INTEGRATED CIRCUIT CHIP DESIGN METHODS AND SYSTEMS USING PROCESS WINDOW-AWARE TIMING ANALYSIS

Jeanne P. Bickford; Eric A. Foreman; Susan K. Lichtensteiger; Mark W. Kuemerle; Jeffrey G. Hemmett


Archive | 2015

System and method for managing circuit performance and power consumption by selectively adjusting supply voltage over time

Jeanne P. Bickford; Eric A. Foreman; Mark W. Kuemerle; Susan K. Lichtensteiger


Archive | 2015

TEMPERATURE-AWARE INTEGRATED CIRCUIT DESIGN METHODS AND SYSTEMS

Jeanne P. Bickford; Alok Chandra; Anand Kumaraswamy; Sandeep Prajapati; Venkatasreekanth Prudvi


international convention on information and communication technology electronics and microelectronics | 2017

Method and structure to reduce leakage for ESD device

Ahmed Y. Ginawi; Nazmul Habib; Mujahid Muhammad; Jeanne P. Bickford


Archive | 2017

TIMING/POWER RISK OPTIMIZED SELECTIVE VOLTAGE BINNING USING NON-LINEAR VOLTAGE SLOPE

Igor Arsovski; Jeanne P. Bickford; Mark W. Kuemerle; Susan K. Lichtensteiger; Jeanne H. Raymond


Archive | 2017

RESISTANCE MEASUREMENT-DEPENDENT INTEGRATED CIRCUIT CHIP RELIABILITY ESTIMATION

Jeanne P. Bickford; Nazmul Habib; Baozhen Li; Tad J. Wilder

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