Jeongwook Koh

Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs

The low-frequency noise (LF-noise) of deep-submicrometer MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics parameters which cause statistical variations in LF-noise behavior of individual devices. Discrete quantities are used and analytical results for the statistical parameters are derived. Analytical equations for average value and standard deviation of noise power are provided. The model is compatible with standard compact models used for circuit simulation.

A Complementary Switched MOSFET Architecture for the 1/f Noise Reduction in Linear Analog CMOS ICs

We present a novel principle for 1/f noise reduction in linear analog CMOS ICs. The principle is experimentally demonstrated for a two-stage CMOS Miller operational amplifier in a standard 0.12-mum, 1.5-V digital CMOS technology. A threefold 1/f noise reduction (5 dB) is achieved at 10 Hz compared with a reference circuit. The impact of the principle on the circuit performance is investigated

Generation of the electrothermal Cauer RC model using a recursive method

We propose direct accessible mathematical expressions of Cauer RC model derived from physical topology, for parameterisation of the transient thermal impedance Zth using a recursive method The new approach gives a direct access to generate accurate and flexible transient thermal impedance. More accurate results are produced with spice simulation when this transient thermal impedance is taken into consideration.