Jin Amanokura

Development of high speed Copper CMP slurry for TSV application based on friction analysis

In order to obtain high speed Cu CMP process for TSV application, we have developed new Copper CMP slurry through friction analysis of Cu reaction layer with an AFM technique. Lateral Modulation Friction Force Microscope (LM-FFM) is the one that is able to measure the friction properly giving a vibration to the layer. We evaluated the torsional displacement between the probe of the LM-FFM and Cu reaction layer under the 5 nm vibration to cancel the shape effect of the Cu reaction layer. The developed Cu CMP slurry makes the frictionally easy-removable Cu reaction layer.

Newly Developed Abrasive-free Copper CMP Slurry Based on Electrochemical Analysis

In order to reduce microscratches and obtain minimized dishing and erosion, we have developed new abrasive-free Cu CMP slurries. During the development of these slurries, some electrochemical examination was performed. The most effective knowledge was obtained through the analysis using rotary Cu disk electrode under pressure. On the basis of these studies, new abrasive-free Cu CMP slurries with a high removal rate and excellent planarity were designed and developed. The mechanism of reducing dishing and erosion was also discussed.

Development of High-Speed Copper Chemical Mechanical Polishing Slurry for Through Silicon Via Application Based on Friction Analysis Using Atomic Force Microscope

In order to obtain a high-speed copper chemical mechanical polishing (CMP) process for through silicon vias (TSV) application, we developed a new Cu CMP slurry through friction analysis of Cu reaction layer by an atomic force microscope (AFM) technique. A lateral modulation friction force microscope (LM-FFM) is able to measure the friction value properly giving a vibration to the layer. We evaluated the torsional displacement between the probe of the LM-FFM and the Cu reaction layer under a 5 nm vibration to cancel the shape effect of the Cu reaction layer. The developed Cu CMP slurry forms a frictionally easy-removable Cu reaction layer.

Development of “New Abrasive-Free Copper CMP Solutions” BASED on Electrochemical and Film Analysis Method

Abrasive-free Cu CMP solutions have been developed to reduce micro-scratches and obtain minimized dishing and erosion properties. During the development of the solutions, some electrochemical examinations were performed. One of the most instructive knowledge was obtained through the Tafel plot. Other attractive data were obtained through Cu complex film analysis. On the basis of these studies were developed and released newly formulated abrasive-free Cu CMP solutions with a high Cu removal rate and excellent topography performance. Mechanism of polishing by applying abrasive-free Cu CMP solutions is also discussed in this paper.