Joanna Wasyluk
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Publication
Featured researches published by Joanna Wasyluk.
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International | 2014
Joanna Wasyluk; Yang Ge; Kai Wurster; Markus Lenski; Carsten Reichel
Embedded strained SiGe (eSiGe) layers applied for source/drain applications enhance hole mobility of the transistor by inducing uniaxial compressive strain into Si-channel [1, 2], One of the common SiGe techniques used for source/drain (S/D) formation is in situ boron doped (ISBD) SiGe epitaxy. It is well known that ISBD eSiGe S/D device exhibits higher drive current than a boron-implanted eSiGe S/D device due to the fact that almost all B atoms locate into substitutional sites of SiGe lattice structure.
Archive | 2013
Joanna Wasyluk; Carsten Reichel; Joachim Patzer; Kai Wurster
Archive | 2014
Frank Jakubowski; Joerg Radecker; Joanna Wasyluk
Archive | 2013
Joanna Wasyluk; Dominic Thurmer; Ardechir Pakfar; Markus Lenski
Archive | 2012
Joanna Wasyluk; Stephan Kronholz; Berthold Reimer; Sven Metzger; Gregory Nowling; John Foster; Paul R. Besser
Archive | 2014
Joanna Wasyluk; Paul R. Besser; Stephen Kronholz; Gregory Nowling; James Schaeffer
Archive | 2012
Joanna Wasyluk; Yew Tuck Chow; Stephan Kronholz; Lindarti Purwaningsih; Ines Becker
Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International | 2014
Carsten Reichel; Joerg Schoenekess; Andreas Dietel; Joanna Wasyluk; Yew Tuck Chow; Thorsten Kammler
Archive | 2014
Ralf Richter; Gerd Zschätzsch; Joanna Wasyluk
Archive | 2013
Stephan Kronholz; Joanna Wasyluk; Yew Tuck Chow
