John R. Tower

Fundamental performance differences between CMOS and CCD imagers: Part II

In depth characterization of CMOS arrays is unveiling many characteristics not observed in CCD imagers. This paper is the first of a series of papers that will discuss unique CMOS characteristics related to fundamental performance differences between CMOS and CCD imagers with emphasis on scientific arrays. The first topic will show that CMOS read noise is ultimately limited by a phenomenon referred to as random telegraph signal (RTS) noise. RTS theory and experimental data discuss its creation, time and frequency domain characteristics, wide variance from pixel to pixel and magnitude on the sensors overall read noise floor. Specific operating parameters that control and lower RTS noise are identified. It is shown how correlated double sampling (CDS) signal processing responds to RTS noise and demonstrate that sub electron CMOS read noise performance is possible. The paper also discusses CMOS sensitivity (V/e-) nonlinearity, an effect not familiar to CCD users. The problem plays havoc on conventional photon transfer analysis that leads to serious measurement errors. New photon transfer relations are developed to deal with the problem. Nonlinearity for custom CMOS pixels is shown to be beneficial for lowering read noise and extending dynamic range. The paper closes with a section on the high performance CMOS array used to generated data products presented.

Uncooled IR imager with 5-mK NEDT

The bi-material concept for room-temperature infrared imaging has the potential of reaching an NE(Delta) T approaching the theoretical limit because of its high responsivity and low noise. The approach, which is 100% compatible with silicon IC foundry processing, utilizes a novel combination of surface micromachining and conventional integrated circuits to produce a bimaterial thermally sensitive element that controls the position of a capacitive plate coupled to the input of a low noise MOS amplifier. This approach can achieve the high sensitivity, the low weight, and the low cost necessary for equipment such as helmet mounted IR viewers and IR rifle sights. The pixel design has the following benefits: (1) an order of magnitude improvement in NE(Delta) T due to extremely high sensitivity and low noise, (2) low cost due to 100% silicon IC compatibility, (3) high image quality and increased yield due to ability to do offset and sensitivity corrections on the imager, pixel-by-pixel; (4) no cryogenic cooler and no high vacuum processing; and (5) commercial applications such as law enforcement, home security, and transportation safety. Two designs are presented. One is a 50 micrometer pixel using silicon nitride as the thermal isolation element that can achieve 5 mK NE(Delta) T; the other is a 29 micrometer pixel using silicon carbide that provides much higher thermal isolation and can achieve 10 mK NE(Delta) T.

Geiger-mode avalanche photodiode focal plane arrays for three-dimensional imaging LADAR

We report on the development of focal plane arrays (FPAs) employing two-dimensional arrays of InGaAsP-based Geiger-mode avalanche photodiodes (GmAPDs). These FPAs incorporate InP/InGaAs(P) Geiger-mode avalanche photodiodes (GmAPDs) to create pixels that detect single photons at shortwave infrared wavelengths with high efficiency and low dark count rates. GmAPD arrays are hybridized to CMOS read-out integrated circuits (ROICs) that enable independent laser radar (LADAR) time-of-flight measurements for each pixel, providing three-dimensional image data at frame rates approaching 200 kHz. Microlens arrays are used to maintain high fill factor of greater than 70%. We present full-array performance maps for two different types of sensors optimized for operation at 1.06 μm and 1.55 μm, respectively. For the 1.06 μm FPAs, overall photon detection efficiency of >40% is achieved at <20 kHz dark count rates with modest cooling to ~250 K using integrated thermoelectric coolers. We also describe the first evalution of these FPAs when multi-photon pulses are incident on single pixels. The effective detection efficiency for multi-photon pulses shows excellent agreement with predictions based on Poisson statistics. We also characterize the crosstalk as a function of pulse mean photon number. Relative to the intrinsic crosstalk contribution from hot carrier luminescence that occurs during avalanche current flows resulting from single incident photons, we find a modest rise in crosstalk for multi-photon incident pulses that can be accurately explained by direct optical scattering.

InP-based Geiger-mode avalanche photodiode arrays for three-dimensional imaging at 1.06 μm

We report on the development of 32 x 32 focal plane arrays (FPAs) based on InGaAsP/InP Geiger-mode avalanche photodiodes (GmAPDs) designed for use in three-dimensional (3-D) laser radar imaging systems at 1064 nm. To our knowledge, this is the first realization of FPAs for 3-D imaging that employ a planar-passivated buried-junction InP-based GmAPD device platform. This development also included the design and fabrication of custom readout integrate circuits (ROICs) to perform avalanche detection and time-of-flight measurements on a per-pixel basis. We demonstrate photodiode arrays (PDAs) with a very narrow breakdown voltage distribution width of 0.34 V, corresponding to a breakdown voltage total variation of less than +/- 0.2%. At an excess bias voltage of 3.3 V, which provides 40% pixel-level single photon detection efficiency, we achieve average dark count rates of 2 kHz at an operating temperature of 248 K. We present the characterization of optical crosstalk induced by hot carrier luminescence during avalanche events, where we show that the worst-case crosstalk probability per pixel, which occurs for nearest neighbors, has a value of less than 1.6% and exhibits anisotropy due to isolation trench etch geometry. To demonstrate the FPA response to optical density variations, we show a simple image of a broadened optical beam.

Design of a multispectral, wedge filter, remote-sensing instrument incorporating a multiport, thinned, CCD area array

The next generation Wedge Imaging Spectrometer (WIS) instruments currently in integration at Hughes SBRD incorporate advanced features to increase operation flexibility for remotely sensed hyperspectral imagery collection and use. These features include: a) multiple linear wedge filters to tailor the spectral bands to the scene phenomenology; b) simple, replaceable fore-optics to allow different spatial resolutions and coverages; c) data acquisition system (DAS) that collects the full data stream simultaneously from both WIS instruments (VNIR and SWIR/MWIR), stores the data in a RAID storage, and provides for down-loading of the data to MO disks; the WIS DAS also allows selection of the spectral band sets to be stored; d) high-performance VNIR camera subsystem based upon a 512 X 512 CCD area array and associated electronics.

Scientific CMOS Pixels

High performance CMOS pixels are introduced; and their development is discussed. 3T (3-transistor) photodiode, 5T pinned diode, 6T photogate and 6T photogate back illuminated CMOS pixels are examined in detail, and the latter three are considered as scientific pixels. The advantages and disadvantages of these options for scientific CMOS pixels are examined. Pixel characterization, which is used to gain a better understanding of CMOS pixels themselves, is also discussed.

Large format backside illuminated CCD imager for space surveillance

The key features and performance data of a 2560/spl times/1960-pixel split-frame-transfer imager developed for space surveillance is described. The eight-port, backside illuminated charge coupled device (CCD) features 24 /spl mu/m pixels with buried blooming drains to provide 100% optical fill-factor and >1000/spl times/ overload protection from blooming. The imaging and storage registers are strapped with metal to achieve vertical transfer clock rates >400 KHz for the 61 mm long imaging register gates. The 5 million pixel array operates at 2.7 frames/s. The monolithic focal plane includes a 32/spl times/32-pixel frame-transfer imager, with a single output, which operates at 1000 frames/s. The output ports employ a floating diffusion output circuit with responsivity of 10.5 /spl mu/V/e and noise of 7e RMS at a 1.25 MHz clock rate. The imager is photocomposed employing a combination of 5/spl times/ and 1/spl times/ lithography. The photocomposition approach is described.

Comparison of 32 x 128 and 32 x 32 Geiger-mode APD FPAs for single photon 3D LADAR imaging

We present results obtained from 3D imaging focal plane arrays (FPAs) employing planar-geometry InGaAsP/InP Geiger-mode avalanche photodiodes (GmAPDs) with high-efficiency single photon sensitivity at 1.06 μm. We report results obtained for new 32 x 128 format FPAs with 50 μm pitch and compare these results to those obtained for 32 x 32 format FPAs with 100 μm pitch. We show excellent pixel-level yield-including 100% pixel operability-for both formats. The dark count rate (DCR) and photon detection efficiency (PDE) performance is found to be similar for both types of arrays, including the fundamental DCR vs. PDE tradeoff. The optical crosstalk due to photon emission induced by pixel-level avalanche detection events is found to be qualitatively similar for both formats, with some crosstalk metrics for the 32 x 128 format found to be moderately elevated relative to the 32 x 32 FPA results. Timing jitter measurements are also reported for the 32 x 128 FPAs.

Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging

×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).

CMOS minimal array

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensors read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.