Jong-cheol Shin

The Features and Characteristics of 5-mega CMOS Image Sensor with Topologically Unique 1.7/spl m/m~1.7/spl mu/m Pixels

CMOS image sensor (CIS) of 5-mega pixel density has been successfully developed with the smallest pixels (1.7mumtimes1.7mum) ever made. The newly introduced unique pixel architecture brought excellent optical symmetry and high electron capacity. Degradation of sensitivity and cross-talk can be suppressed with the optimization of the optical structure through proper color filter material and reduction of total aspect ratio (vertical stack height/pixel pitch) with Cu back end of line (BEOL)

Dedicated process architecture and the characteristics of 1.4 μm pixel CMOS image sensor with 8M density

A 1.4 μm-pitch pixel of CMOS image sensor, which is the smallest to date, has been successfully developed and integrated into 8M density for the first time. To overcome the crucial degradation of the saturation charge and sensitivity, a novel photodiode structure extended under transfer gate and an elaborate optical design including very thin tungsten pixel routing with 65 nm-grade design rules are introduced, which result in enhanced electrical and optical performance.