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Joon Goo Hong

Samsung

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Publication

Featured researches published by Joon Goo Hong.

Archive | 2016

STRAINED STACKED NANOSHEET FETS AND/OR QUANTUM WELL STACKED NANOSHEET

Ryan M. Hatcher; Robert C. Bowen; Mark S. Rodder; Borna J. Obradovic; Joon Goo Hong

IEEE Journal of the Electron Devices Society | 2018

A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration

Borna J. Obradovic; Titash Rakshit; Ryan M. Hatcher; Jorge Kittl; Rwik Sengupta; Joon Goo Hong; Mark S. Rodder

Archive | 2017

METHOD TO MAKE SELF-ALIGNED VERTICAL FIELD EFFECT TRANSISTOR

Joon Goo Hong; Borna J. Obradovic; Mark S. Rodder

Archive | 2017

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH HORIZONTAL NANOSHEET CONDUCTIVE CHANNEL STRUCTURES FOR MOL/INTER-CHANNEL SPACING AND RELATED CELL ARCHITECTURES

Rwik Sengupta; Mark S. Rodder; Joon Goo Hong; Titash Rakshit

Archive | 2017

STACKED INDEPENDENTLY CONTACTED FIELD EFFECT TRANSISTOR

Ryan M. Hatcher; Borna J. Obradovic; Joon Goo Hong; Rwik Sengupta

Archive | 2017

METHODS FOR VARIED STRAIN ON NANO-SCALE FIELD EFFECT TRANSISTOR DEVICES

Jorge Kittl; Joon Goo Hong; Dharmendar Reddy Palle; Mark S. Rodder

Archive | 2017

METHODS TO ACHIEVE STRAINED CHANNEL FINFET DEVICES

Jorge Kittl; Joon Goo Hong; Dharmendar Reddy Palle; Mark S. Rodder

Archive | 2016

FINFET HAVING DUAL VERTICAL SPACER AND METHOD OF MANUFACTURING THE SAME

Dharmendar Reddy Palle; Borna J. Obradovic; Joon Goo Hong; Mark S. Rodder

Archive | 2016

0T bi-directional memory cell

Ryan M. Hatcher; Titash Rakshit; Borna J. Obradovic; Jorge Kittl; Joon Goo Hong

Archive | 2016

Semiconductor device having buried power rail

Rwik Sengupta; Joon Goo Hong; Mark S. Rodder

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Mark S. Rodder

Samsung

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Borna J. Obradovic

Samsung

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Jorge Kittl

Samsung

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Rwik Sengupta

Samsung

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Ryan M. Hatcher

Samsung

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Dharmendar Reddy Palle

Samsung

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Titash Rakshit

Samsung

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Robert C. Bowen

Samsung

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