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Featured researches published by Joon-Yong Choi.


international solid-state circuits conference | 2007

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

Kwang-Jin Lee; Beak-Hyung Cho; Woo-Yeong Cho; Sang-beom Kang; Byung-Gil Choi; Hyung-Rok Oh; Chang-Soo Lee; Hye-jin Kim; Joon-Min Park; Qi Wang; Mu-Hui Park; Yu-Hwan Ro; Joon-Yong Choi; Ki-Sung Kim; Young-Ran Kim; In-Cheol Shin; Ki-won Lim; Ho-keun Cho; Chang-han Choi; Won-ryul Chung; Du-Eung Kim; Kwang-Suk Yu; G.T. Jeong; Hong-Sik Jeong; Choong-keun Kwak; Chang-Hyun Kim; Kinam Kim

A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are described. Through these schemes, the PRAM achieves read throughput of 266MB/S and maximum write throughput of 4.64MB/S with a 1.8V supply.


SID Symposium Digest of Technical Papers | 2007

P‐73: A Novel LCD Backlight Unit using a Light‐guide Plate with High Fill‐factor Microlens Array and a Conical Microlens Array Sheet

Joohyung Lee; Jun-Bo Yoon; Joon-Yong Choi; Sang-Min Bae

In this paper, we have proposed a novel LCD backlight unit (BLU) composed of a light-guide plate (LGP) mounting high fill-factor microlens array and an optical sheet of conical microlens array with a slanted angle of 54.5°. The proposed BLU shows 13.6% improvement in the total luminance compared with the conventional BLU and the viewing angle of 108° (−42° ∼ 66°). We also have fabricated Ni-stamper with the microlens array pattern for injection molding, one of the cost-efficient methods for mass production.


Archive | 2008

Nonvolatile memory using resistance material

Joon-Yong Choi; Byung-Gil Choi; Du-Eung Kim


Archive | 2007

Phase change memory devices and program methods

Byung-Gil Choi; Du-Eung Kim; Yu-Hwan Ro; Joon-Yong Choi; Beak-Hyung Cho; Woo-Yeong Cho


Archive | 2009

Resistance Variable Memory Device for Protecting Coupling Noise

HoJung Kim; Joon-Yong Choi


Thin Solid Films | 2013

Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

Joon-Yong Choi; Sanghoon Kang; H.S. Oh; T.H. Yu; Insuk Sohn


Archive | 2011

SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM HAVING THE SAME, AND METHOD FOR OPERATING THE SEMICONDUCTOR DEVICE

Joon-Yong Choi; Hoi Ju Chung


Archive | 2009

PHASE-CHANGE RANDOM ACCESS MEMORY AND METHOD OF SETTING BOOT BLOCK THEREIN

Yu-Hwan Ro; Kwang-Ho Kim; Kwang-Jin Lee; Joon-Yong Choi


Archive | 2010

Method of preventing coupling noises for a non-volatile semiconductor memory device

Kwang-Jin Lee; Yong-Jun Lee; Du-Eung Kim; Woo-Yeong Cho; Joon-Yong Choi


Archive | 2010

Nonvolatile memory device and method for controlling word line or bit line thereof

Joon-Yong Choi; Byung-Gil Choi; Yu Hwan Ro; Yong-Jun Lee

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