Byung-Gil Choi

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput

A 512Mb diode-switch PRAM is developed in a 90nm CMOS technology. A core configuration, read/write circuit techniques, and a charge-pump system for the diode-switch PRAM are described. Through these schemes, the PRAM achieves read throughput of 266MB/S and maximum write throughput of 4.64MB/S with a 1.8V supply.

A 0.1-

A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectively. The write throughput was 0.5 MB/s with internal times2 write and can be increased to ~2.67 MB/s with times16 write. Endurance and retention characteristics are measured to be 107 cycles and ten years at 99 degC

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A non-volatile 64 Mb phase-transition RAM is developed by fully integrating a chalcogenide alloy GST (Ge/sub 2/Sb/sub 2/Te/sub 5/) into 0.18 /spl mu/m CMOS technology. This alloy is programmed by resistive heating. To optimize SET/RESET distribution, a 512 kb sub-core architecture, featuring meshed ground line, is proposed. Random read access and write access for SET/RESET are 60 ns, 120 ns and 50 ns, respectively, at 3.0 and 30/spl deg/C.

1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

A 1.8 V 64 Mb phase-change RAM with improved write performance is fabricated in a 0.12 /spl mu/m CMOS technology. The improvement of RESET and SET distributions is based on cell current regulation and multiple step-down pulse generators. The read access time and SET-write time are 68 ns and 180 ns respectively.

A 0.18 /spl mu/m 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance is characterized at 1.8V supply. Measured initial read access time and burst-read access time are 62ns and 10ns, respectively. The maximum write throughput is 3.3MB/S

Enhanced write performance of a 64 Mb phase-change random access memory

A PRAM includes 8 b embedded RISC to generate the optimized internal timing and voltage parameters to control the variations of the cell resistances. The PRAM blocks with small margin window of cell resistances are detected, analyzed and controlled by processor-based built-in self-optimizer (BISO). A 4 Mb test PRAM is fabricated in a 90 nm 3-metal diode-switch PRAM cell technology. Measured margin increases by up to 221%.