Jun-kyu Yang
Samsung
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Publication
Featured researches published by Jun-kyu Yang.
symposium on vlsi technology | 2007
Zongliang Huo; Jun-kyu Yang; Seung-Hyun Lim; Seung-Jae Baik; Juyul Lee; Jeong Hee Han; In-Seok Yeo; U-In Chung; Joo Tae Moon; Byung-Ii Ryu
A novel multi-level charge trap flash memory with band engineering concept on the trap layer is firstly demonstrated. The engineered band structure, Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub> (NAN) was adopted as a trap layer in place of single Si<sub>3</sub>N<sub>4</sub> layer in TANOS structure (Y. Shin et al., 2005). Compared to the reference structure of single Si<sub>3</sub>N<sub>4</sub> trap layer, charge trap flash memory based on NAN trap layer shows larger memory window (~10 V), which is ideal for multi-level application. In addition, highly reliable operation is obtained due to lower program/erase voltages, superior endurance, and smaller room/high temperature pre-/post-cycling charge loss (DeltaVth <0.5 V).
Archive | 2012
Jun-kyu Yang; Phil Ouk Nam; Youngseon Son; Kwangyoung Lee; Ki-Hyun Hwang
Archive | 2013
Dong-Chul Yoo; Phil Ouk Nam; Jun-kyu Yang; Woong Lee; Woosung Lee; Jin-Gyun Kim; Daehong Eom
Archive | 2013
Phil-ouk Nam; Jun-kyu Yang; Byong-hyun Jang; Ki-Hyun Hwang; Jae-Young Ahn
Archive | 2013
Chan-jin Park; Ki-Hyun Hwang; Dong-Chul Yoo; Jun-kyu Yang; Gyung-jin Min; Yoochul Kong; Han-mei Choi
Archive | 2012
Jun-kyu Yang; Ki-Hyun Hwang; Phil-ouk Nam; Jae-Young Ahn; Han-mei Choi; Dong-Chul Yoo
Archive | 2011
H.J. Kim; Jin-Gyun Kim; Hun-Hyeong Lim; Ki-Hyun Hwang; Jae-Young Ahn; Jun-kyu Yang
Archive | 2014
Phil-ouk Nam; Jun-kyu Yang; Hun-Hyeong Lim; Ki-Hyun Hwang; Jae-Young Ahn; Dong-Chul Yoo
Archive | 2008
Zongliang Huo; In-Seok Yeo; Seung-Hyun Lim; Kyong-Hee Joo; Jun-kyu Yang
Archive | 2007
Jun-kyu Yang; Seung-Jae Baik; Jin-Tae Noh; Seung-Hyun Lim; Kyong-Hee Joo; Zongliang Huo
