Jung-Geun Jee
Samsung
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Publication
Featured researches published by Jung-Geun Jee.
international reliability physics symposium | 2007
Jung-Geun Jee; Wookhyun Kwon; Woong Lee; Jung-Hyun Park; Hyeong-Ki Kim; Ho-Min Son; Won-Jun Chang; Jae-jong Han; Yong-woo Hyung; Hyeon-deok Lee
The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively.
Archive | 2011
Sang-Ryol Yang; Ki-Hyun Hwang; Seung-Bae Park; Jin-Gyun Kim; Woong Lee; Jung-Geun Jee; Ji-Hoon Choi
Archive | 2006
Jung-Geun Jee; Young-Jin Noh; Bon-young Koo; Chul-Sung Kim; Hun-Hyeoung Leam; Woong Lee
Archive | 2011
Jung-Geun Jee; Ho-Min Son; Yong-woo Hyung; Jae-jong Han; Taek-Jin Lim
Archive | 2012
Jung-Geun Jee; Jin-Gyun Kim; Ji-Hoon Choi; Ki-Hyun Hwang
Archive | 2012
Jung-Geun Jee; Woosung Lee
Archive | 2008
Won-Jun Jang; Ho-Min Son; Woong Lee; Yong-woo Hyung; Jung-Geun Jee
Archive | 2012
Bio Kim; Byong-ju Kim; Jung-Geun Jee; Jin-Gyun Kim; Jae-Young Ahn; Ki-Hyun Hwang
Archive | 2007
Won-Jun Jang; Yong-woo Hyung; Jae-jong Han; Ho-Min Son; Woong Lee; Jung-Geun Jee
Journal of the Korean Physical Society | 2006
Jae-jong Han; Kong-Soo Lee; Jung-Geun Jee; Woong Lee; Yong-woo Hyung; Hyeon-deok Lee; Jin-Ho Ahn
