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Dive into the research topics where Ki-Yeol Park is active.

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Featured researches published by Ki-Yeol Park.


international electron devices meeting | 2004

Effect of mechanical strength and residual stress of dielectric capping layer on electromigration performance in Cu/low-k interconnects

Kyoung Woo Lee; Hyeon-Jin Shin; Young-Jin Wee; Tae-Chan Kim; Andrew T. Kim; Ju-Jin Kim; S. Choi; Bong-seok Suh; Sang-In Lee; Ki-Yeol Park; J.W. Hwang; Seok Woo Nam; Y.J. Moon; J.E. Ku; Hyeon-deok Lee; Miyoung Kim; I.H. Oh; J.Y. Maeng; Il-Goo Kim; Jong-Gil Lee; A.M. Lee; W.-H. Choi; S.J. Park; N.I. Lee; Hyon-Goo Kang; G.P. Suh

We present the effect of mechanical strength and residual stress of dielectric barrier on electromigration performance in Cu/low-k interconnects. It has been discovered that mechanical strength and residual stress of dielectric capping layer have a great role on EM performance. The use of mechanically strong dielectric capping material with high residual compressive stress in Cu/low-k interconnects improves a structural confinement of Cu line. Also, it helps tensile stress level decrease near via bottom and compressive stress level increase at Cu beneath SiCN along Cu line. Reduction of tensile stress at via bottom would effectively suppress void nucleation and growth. Moreover, increase of compressive stress in Cu beneath SiCN alleviates Cu migration through that pathway, leading to a longer lifetime of interconnect component.


international electron devices meeting | 2013

Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT

Jong-Ho Bae; Sun-Kyu Hwang; Jongmin Shin; Hyuck-In Kwon; Chan Hyeong Park; Hyoji Choi; Jong-Bong Park; Jongseob Kim; Jong-Bong Ha; Ki-Yeol Park; Jae-joon Oh; Jai-Kwang Shin; U-In Chung; Kwang-Seok Seo; Jong-Ho Lee

Trap-related transient characteristics and RTN in p-GaN gate HEMT were characterized, for the first time to our knowledge. Current conduction mechanism in DC IG is explained based on proposed model. Hopping conduction mechanism is responsible for IG at VG <; 0. IG at VG > 0 seems to be controlled by thermionic emission and affected by the action of floating-base n(W)-p(p-GaN)-n(AlGaN/GaN) bipolar transistor. Transient current behavior is related to the DC conduction mechanism and could be explained by thermal emission and charge trapping in p-GaN and AlGaN layers. Measured transient behavior of gate capacitance corresponds to that of the transient currents. Hole trapping into the AlGaN layer and existence of percolation path in gate and drain currents are verified by analyzing RTNs in IG and ID. Trap position and activation energy regarding RTN are firstly extracted. RTN time constants are similar to those in IG and ID transient behavior.


Archive | 2013

Electronic device including transistor and method of operating the same

Woo-Chul Jeon; Ki-Yeol Park; Young-Hwan Park; Jai-Kwang Shin; Jae-joon Oh


Archive | 2015

HIGH ELECTRON MOBILITY TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE SAME

Young-Hwan Park; Jai-Kwang Shin; Ki-Yeol Park; Jae-joon Oh; Woo-Chul Jeon; Hyoji Choi


Archive | 2013

High electron mobility transistor and method of driving the same

Woo-Chul Jeon; Jongseob Kim; Ki-Yeol Park; Young-Hwan Park; Jae-joon Oh; Jong-Bong Ha; Jai-Kwang Shin


Archive | 2013

High electron mobility transistor including plurality of gate electrodes

Woo-Chul Jeon; Young-Hwan Park; Ki-Yeol Park; Jai-Kwang Shin; Jae-joon Oh; Jong-Bong Ha; Sun-Kyu Hwang


Archive | 2013

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Woo-Chul Jeon; Young-Hwan Park; Ki-Yeol Park; Jai-Kwang Shin; Jae-joo Oh; Jong-Bong Ha


Archive | 2013

NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR

Woo-Chul Jeon; Young-Hwan Park; Jae-joon Oh; Kyoung-yeon Kim; Joon-Yong Kim; Ki-Yeol Park; Jai-Kwang Shin; Sun-Kyu Hwang


Archive | 2013

Power switching device and method of manufacturing the same

Woo-Chul Jeon; Young-Hwan Park; Ki-Yeol Park; Jai-Kwang Shin; Jae-joon Oh


Archive | 2013

High electron mobility transistor and method for driving the same

Woochul Jeon; Jongseob Kim; 鍾燮 金; Ki-Yeol Park; 基烈 朴; Young-Hwan Park; 永煥 朴; 在浚 ▲呉▼; Jae-joon Oh; Jong-Bong Ha; 種奉 河; Jai-Kwang Shin; 在光 申

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Jong-Bong Ha

Kyungpook National University

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Woochul Jeon

Samsung Electro-Mechanics

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