Kiyoto Watabe

A half-bridge driver IC with newly designed high voltage diode

A newly designed diode is proposed and demonstrated in action experimentally. The new device has successfully increased forward current without additional mask and increase of the area. Remarkable improvement in the reverse recovery characteristic of the new diode can be realized by electron irradiation. The fabricated ICs with the new diode operated at 3 kHz PWM carrier frequency.

A 0.8 /spl mu/m high voltage IC using newly designed 600 V lateral IGBT on thick buried-oxide SOI

We have demonstrated that the developed process has a breakdown voltage of higher than 600 V with use of thick buried-oxide and thin SOI. From both experiments and simulations, the cylindrical structure in the LIGBTs shows the best performance; it improves the latch-up tolerance without the increase of on-state voltage. Moreover, the process we have developed is completely compatible with an existing 5 V, 0.8 /spl mu/m CMOS process.

An 0.8-/spl mu/m high-voltage IC using a newly designed 600-V lateral p-channel dual-action device on SOI

A novel lateral power device, termed a p-channel dual-action device (p-ch DAD), is proposed and experimentally demonstrated in action. This device is based on a new dual-action mechanism. The new device has successfully increased on-state current without lowering the device breakdown voltage. The 600-V level-shifting action of the p-ch DAD has been confirmed by a circuit experiment. A newly designed p-ch DAD on the silicon on insulator can be made by adding four additional masks and trench technology to a 0.8-/spl mu/m CMOS process. Moreover, the process we have developed is completely compatible with an existing 5-V 0.8-/spl mu/m CMOS process.

A novel p-channel dual action device for HVIC

A novel lateral power device termed p-channel Dual Action Device (p-ch DAD) is proposed and demonstrated in action experimentally. The new device has successfully increased on-state current without lowering the device breakdown voltage. 600 V level-shifting action of the p-ch DAD has been confirmed by a circuit experiment.

A new phenomenon of p-channel dual action device

A novel lateral power device termed the p-channel dual action device (p-ch DAD) is proposed and demonstrated in action experimentally and numerically. It consists of a p-channel HVMOS, n-channel HVMOS and resistance. This hybrid device has increased on-state current without lowering the device breakdown voltage. The conductivity modulation of the new device is discussed.