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Dive into the research topics where Krishna P. Murella is active.

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Featured researches published by Krishna P. Murella.


Thin Solid Films | 1998

Exploring CMP solutions to planarity challenges with tungsten plugs

John Mendonca; Krishna P. Murella; Inki Kim; Jim Schlueter; Chris Karlsrud

Abstract Tungsten plugs have been used in the recent past for local interconnects and for level–level interconnect applications. The resist etch back process has been the method of choice historically for planarization purposes. However, with the advent of chemical mechanical polishing (CMP) technology, one has an alternate path for achieving global planarity. Process integration issues have to be worked out. In this paper, we have explored the effect of various process parameters and consumable changes on planarity/non-uniformity. The across wafer and wafer–wafer non-uniformity 1-sigma was reduced from 10–20% to 5000 A/min with 5.5% wafer–wafer removal variation.


Multilevel interconnect technology. Conference | 1998

Copper post-CMP cleaning process on a dry-in/dry-out tool

Sanjay Basak; Malcolm Grief; Anand Gupta; Krishna P. Murella; Barrie VanDevender

Metal Chemical Mechanical Planarization (CMP) and post CMP cleaning have continued to increase in importance in semiconductor manufacturing. The introduction of copper metallization into semiconductor manufacturing processes has created a need for integrating CMP and cleaning tools, as well as a demand for the development of novel cleaning solutions. One system designed for integrated CMP processing and cleaning, commonly referred to as dry-in/dry-out CMP, is the SpeedFam Auriga C. The Auriga C integrates a widely used polishing tool together with a proven cleaning technique. The key to the operation of the Auriga C cleaning process is the effective operation of the PVA brush cleaners, water track transport, final jet rinse and high-speed spinner dryer. The effective operation of the cleaning mechanism for copper post- CMP cleaning requires the use of new chemical solutions. Typical solutions used for post process cleaning of more mature CMP processes are either ineffective for cleaning or chemically incompatible with the copper process. This paper discusses the cleaning mechanism used in an integrated dry- in/dry-out tool and demonstrates an effective and novel cleaning solution for use with this type of post-CMP cleaning process.


Archive | 1999

Two-step chemical-mechanical planarization for damascene structures on semiconductor wafers

Thomas Laursen; Malcolm K. Grief; Krishna P. Murella; Sanjay Basak


Archive | 2015

Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications

Xiaobo Shi; Krishna P. Murella; James Allen Schlueter; Jae Ouk Choo


Archive | 2006

Method for polishing copper on a workpiece surface

Julia Svirchevski; Saket Chadda; Ismail Emesh; Thomas Laursen; Bentley J. Palmer; Sanjay Basak; Krishna P. Murella


Archive | 1999

Pad conditioning for copper-based semiconductor wafers

Thomas Laursen; Malcolm K. Grief; Krishna P. Murella; Sanjay Basak


Archive | 2000

Method for conditioning a pad used for polishing a for copper-based semiconductor wafer

Thomas Laursen; Malcolm K. Grief; Sanjay Basak; Krishna P. Murella


Archive | 2018

Chemical Mechanical Planarization of Films Comprising Elemental Silicon

James Matthew Henry; Hongjun Zhou; Krishna P. Murella; Dnyanesh Chandrakant Tamboli; Joseph Rose


Archive | 2017

COMPOSITE PARTICLES, AND METHODS OF REFINEMENT AND USE THEREOF

Zhou Hongjun; John Edward Quincy Hughes; Krishna P. Murella; Machado Reinaldo Mario; Marc O'neal Leonard; Tamboli Dnyanesh Chandrakant


Archive | 2017

Composite particles, refining method of the same, and use of the same

John Edward Quincy Hughes; Mark Leonard O'neill; Dnyanesh Chandrakant Tamboli; Hongjun Zhou; Krishna P. Murella; Reinaldo Mario Machado

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