M. Da Rocha Rolo

CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments

Pixel detectors at HL-LHC experiments or other future experiments are facing new challenges, especially in terms of unprecedented levels of radiation and particle flux. This paper describes the progress made by the CHIPIX65 project of INFN for the development of a new generation readout ASIC using CMOS 65 nm technology.

Pixel front-end with synchronous discriminator and fast charge measurement for the upgrades of HL-LHC experiments

The upgrade of the silicon pixel sensors for the HL-LHC experiments requires the development of new readout integrated circuits due to unprecedented radiation levels, very high hit rates and increased pixel granularity. The design of a very compact, low power, low threshold analog very front-end in CMOS 65 nm technology is described. It contains a synchronous comparator which uses an offset compensation technique based on storing the offset in output. The latch can be turned into a local oscillator using an asynchronous logic feedback loop to implement a fast time-over-threshold counting. This design has been submitted and the measurement results are presented.

TOFFEE: a full custom amplifier-comparator chip for timing applications with silicon detectors

We report on the design of a full custom amplifier-comparator readout chip for silicon detectors with internal gain designed for precise timing applications. The ASIC has been developed in UMC 110 nm CMOS technology and is aimed to fulfill the CMS-TOTEM Precision Proton Spectrometer (CT-PPS) time resolution requirements (~ 30 ps per detector plane). It features LVDS outputs and the signal dynamic range matches the requirements of the High Precision TDC (HPTDC) system. The preliminary measurements results with a test board are included.

A custom readout electronics for the BESIII CGEM detector

For the upgrade of the inner tracker of the BESIII spectrometer, planned for 2018, a lightweight tracker based on an innovative Cylindrical Gas Electron Multiplier (CGEM) detector is now under deve ...

A Prototype of a New Generation Readout ASIC in 65 nm CMOS for Pixel Detectors at HL-LHC

The foreseen High-Luminosity upgrade at the CERN Large Hadron Collider (LHC) will constitute a new frontier for particle physics after year 2024, demanding for the installation of new silicon pixel detectors able to withstand unprecedented track densities and radiation levels in the inner tracking systems of current general-purpose experiments. This paper describes the implementation of a new-generation pixel chip demonstrator using a commercial 65 nm CMOS technology and targeting HL-LHC specifications. It was designed as part of the Italian INFN CHIPIX65 project and in close synergy with the international CERN RD53 collaboration on 65 nm CMOS. The prototype is composed of a matrix of 64×64 pixels with 50 μm × 50 μm cells featuring a compact design, low-noise and low-power performance. The pixel array integrates two different analogue front-end architectures working in parallel, one with asynchronous and one with synchronous hit discriminators. Common characteristics are a compact layout able to fit into half the pixel size, low-noise performance (ENC < 100 e− RMS for 50 fF input capacitance), below 5 μW/pixel power consumption, linear charge measurements up to 30 ke− input charge using Time-over-Threshold (ToT) encoding and leakage current compensation up to 50 nA per pixel. A novel region-based digital architecture has been designed in order to ensure > 99% efficiency for expected 3 GHz/cm2 hit rate, 1 MHz trigger rate and 12.5 μs trigger latency at HL-LHC. Pixels have been organized into regions of 4×4 cells and a common synthesized logic shared among all pixels provides a centralized memory for latency buffering, performs the trigger matching and handles the local configuration. The simulated particle inefficiency for this architecture is below 0.1% under nominal HL-LHC conditions. All global biases and voltages required by analogue front-ends are generated on-chip using 10-bit programmable DACs. Bias currents and voltages can be monitored by a 12-bit ADC. A bandgap voltage reference circuit provides a stable reference voltage for all these blocks. The readout of triggered data is based on replicated FIFOs placed at the chip periphery. Data are finally sent off-chip with 8b/10b encoding using a high-speed serializer. Triggerless and debug operating modes are also supported. Chip configuration and slow-control are performed through fully-duplex synchronous Serial Peripheral Interface (SPI) master/slave transactions. The I/O interface uses custom-designed JEDEC-compliant SLVS transmitters and receivers. All blocks and analogue front-ends have been silicon-proven during a previous prototyping phase and were demonstrated to be radiation tolerant up to 580 Mrad Total Ionizing Dose (TID) or beyond. The CHIPIX65 demonstrator was submitted for fabrication on July 2016. It was received back from the foundry on October 2016 and preliminary experimental characterizations started.

A prototype of pixel readout ASIC in 65 nm CMOS technology for extreme hit rate detectors at HL-LHC

This paper describes a readout ASIC prototype designed by the CHIPIX65 project, part of RD53, for a pixel detector at HL-LHC . A 64×64 matrix of 50×50μm2 pixels is realised. A digital architecture has been developed, with particle efficiency above 99.5% at 3 GHz/cm2 pixel rate, trigger frequency of 1 MHz and 12.5μsec latency. Two analog front end designs, one synchronous and one asynchronous, are implemented. Charge is measured with 5-bit precision, analog dead-time below 1%. The chip integrates for the first time many of the components developed by the collaboration in the past, including the Digital-to-Analog converters, Bandgap reference, Serializer, sLVS drivers, and analog Front Ends. Irradiation tests on these components proved their reliability up to 600 Mrad.

First measurements of a prototype of a new generation pixel readout ASIC in 65 nm CMOS for extreme rate HEP detectors at HL-LHC

A first prototype of a readout ASIC in CMOS 65 nm for a pixel detector at High Luminosity LHC is described. The pixel cell area is 50×50 μm2 and the matrix consists of 64×64 pixels. The chip was designed to guarantee high efficiency at extreme data rates for very low signals and with low power consumption. Two different analogue front-end designs, one synchronous and one asynchronous, were implemented, both occupying an area of 35×35 μm2. ENC value is below 100 e− for an input capacitance of 50 fF and in-time threshold below 1000 e−. Leakage current compensation up to 50 nA with power consumption below 5 μW. A ToT technique is used to perform charge digitization with 5-bit precision using either a 40 MHz clock or a local Fast Oscillator up to 800 MHz. Internal 10-bit DACs are used for biasing, while monitoring is provided by a 12-bit ADC. A novel digital architecture has been developed to ensure above 99.5% hit efficiency at pixel hit rates up to 3 GHz/cm2, trigger rates up to 1 MHz and trigger latency of 12.5 μs. The total power consumption per pixel is below 5 μW. Analogue dead-time is below 1%. Data are sent via a serializer connected to a CMOS-to-SLVS transmitter working at 320 MHz. All IP-blocks and front-ends used are silicon-proven and tested after exposure to ionizing radiation levels of 500-800 Mrad. The chip was designed as part of the Italian INFN CHIPIX65 project and in close synergy with the international CERN RD53 and was submitted in July 2016 for production. Early test results for both front-ends regarding minimum threshold, auto-zeroing and low-noise performance are high encouraging and will be presented in this paper.

TOFFEE: A fully custom amplifier-comparator chip for silicon detectors with internal gain

We report on the design and tests results of a fully custom amplifier-comparator readout chip designed to be coupled to silicon detectors with internal charge multiplication for precise timing applications. The ASIC has been developed in UMC 110nm CMOS technology and aims to fulfill the CMS-TOTEM Precision Proton Spectrometer (CT-PPS) time resolution requirements (∼30 ps per detector plane). Both LVDS outputs and the signal dynamic range match the requirements of the High Precision TDC (HPTDC) system. Noise and signal amplitude measurements with a test board are included.

TIGER, a 64 channel mixed-mode ASIC for the readout of the CGEM detector in the BESIII experiment

A mixed-mode ASIC, TIGER (Turin Integrated Gem Electronics for Readout), optimized for the readout of the cylindrical GEM detector of the BESIII experiment is presented. The chip consists of 64 analog front-ends, each featuring a charge-sensitive amplifier followed by a dual-shaper. A low-power TDC and a 10 bit Wilkinson ADC with de-randomizing buffers allow to measure both the time-of-arrival of the event and the energy deposited by the impinging particles. The ASIC is designed for input capacitance up to 100 pF, event rates of 60 kHz per channel and maximum power consumption of 10 mW/channel. The chip is fabricated in a 110 nm CMOS technology.

A prototype of a new generation readout ASIC in 65nm CMOS for pixel detectors at HL-LHC

The foreseen High-Luminosity upgrade at the CERN Large Hadron Collider (LHC) will constitute a new frontier for particle physics after year 2024, demanding for the installation of new silicon pixel detectors able to withstand unprecedented track densities and radiation levels in the inner tracking systems of current general-purpose experiments. This paper describes the implementation of a new-generation pixel chip demonstrator using a commercial 65 nm CMOS technology and targeting HL-LHC specifications. It was designed as part of the Italian INFN CHIPIX65 project and in close synergy with the international CERN RD53 collaboration on 65 nm CMOS. The prototype is composed of a matrix of 64×64 pixels with 50 μm × 50 μm cells featuring a compact design, low-noise and low-power performance. The pixel array integrates two different analogue front-end architectures working in parallel, one with asynchronous and one with synchronous hit discriminators. Common characteristics are a compact layout able to fit into half the pixel size, low-noise performance (ENC 99% efficiency for expected 3 GHz/cm2 hit rate, 1 MHz trigger rate and 12.5 μs trigger latency at HL-LHC. Pixels have been organized into regions of 4×4 cells and a common synthesized logic shared among all pixels provides a centralized memory for latency buffering, performs the trigger matching and handles the local configuration. The simulated particle inefficiency for this architecture is below 0.1% under nominal HL-LHC conditions. All global biases and voltages required by analogue front-ends are generated on-chip using 10-bit programmable DACs. Bias currents and voltages can be monitored by a 12-bit ADC. A bandgap voltage reference circuit provides a stable reference voltage for all these blocks. The readout of triggered data is based on replicated FIFOs placed at the chip periphery. Data are finally sent off-chip with 8b/10b encoding using a high-speed serializer. Triggerless and debug operating modes are also supported. Chip configuration and slow-control are performed through fully-duplex synchronous Serial Peripheral Interface (SPI) master/slave transactions. The I/O interface uses custom-designed JEDEC-compliant SLVS transmitters and receivers. All blocks and analogue front-ends have been silicon-proven during a previous prototyping phase and were demonstrated to be radiation tolerant up to 580 Mrad Total Ionizing Dose (TID) or beyond. The CHIPIX65 demonstrator was submitted for fabrication on July 2016. It was received back from the foundry on October 2016 and preliminary experimental characterizations started.