M. Gilbert

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

Early production results are reviewed for IBMs integrated SiGe HBT technology. With a sample size of over 200 wafers, statistical control of key HBT parameters (F/sub T/, F/sub max/, R/sub bb/, R/sub bi/, /spl beta/) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirement for the high performance wireless communications marketplace.

SiGe HBT technology: device and application issues

SiGe HBT Bipolar/BiCMOS technology has a unique opportunity in the wireless marketplace because it can provide the performance of III-V HBTs and the integration/cost benefits of silicon bipolar/BiCMOS. This paper will review the status of IBMs SiGe HBT technology particularly focusing on some key device and application issues for high frequency circuit applications. In this work we review graded-base SiGe HBTs optimized for analog circuits and address four key issues: 1) BV/sub ceo/ constraints, 2) Transmission line loss, 3) Noise performance, and 4) Process integration leverage and issues. All of the hardware results are for self-aligned, polysilicon emitter, graded-base SiGe HBTs fabricated in a 200 mm semiconductor production line using the UHV/CVD technique for film growth.

A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications

A BiCMOS technology including 0.25 /spl mu/m electrical channel length (L/sub EFF/) nFET and pFET CMOS devices and 60 GHz f/sub max/ SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabricated on the same chip to demonstrate the high integration capabilities of the technology. The CMOS circuits include CMOS ring oscillators and a 64 k SRAM with a 34 /spl mu/m/sup 2/ cell size. The SiGe-HBT circuits include ECL ring oscillators and a Voltage Controlled Oscillator (VCO). This is the highest level of integration yet achieved for any SiGe-base bipolar technology.

A 200 mm SiGe-HBT technology for wireless and mixed-signal applications

If SiGe-HBT technology is to successfully compete with GaAs technology in the rapidly emerging wireless communications market, it must demonstrate comparable performance, higher integration levels, compatibility with high volume production, and hence reduced costs. This work describes the first manufacturable 0.5 /spl mu/m SiGe-HBT technology for wireless communications applications which meets these requirements. The technology is currently installed on a 200 mm production line, using a commercial UHV/CVD system for SiGe film growth. AC transistor results (f/sub max/>45 GHz, power added efficiency=66%) demonstrate that this 200 mm SiGe technology is suitable for /spl ges/2.0 GHz RF applications. Record performance was achieved in a 1.2 GS/sec, <1.0 W 12-bit digital-to-analog convertor (DAC). Important manufacturing issues for high performance SiGe-HBTs which are addressed in this work include: SiGe epitaxial film defect densities, long-term device reliability, and device scaling.<<ETX>>

113-GHz f/sub T/ graded-base SiGe HBT's

Summary form only given. A novel low-thermal cycle process was used to fabricate epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-doped polysilicon emitter which requires only a 800 degrees C-10-s anneal. A peak f/sub T/ of 113 GHz at V/sub CB/ of 1 V was obtained for an intrinsic base sheet resistance of 7 k Omega / Square Operator . >

113-GHz f T graded-base SiGe HBTs

A novel low-thermal cyclc proccss was used to fabricatc epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-dopcd polysilicon emitter which requires only a 800°C-10s anneal. A peak fT of 113 GHz at VCB of 1V was obtained for an intrinsic base sheet resistance of 7 kΩ/square.

SiGe HBTs reach the microwave and millimeter-wave frontier

Silicon germanium heterojunction bipolar transistors (SiGe HBTs) offer significant performance and cost advantages over conventional technologies in the production of integrated circuits for communications, computer and transportation applications. This paper reviews the status of SiGe development, compares SiGe with existing Si and GaAs technologies, and discusses applications extending into the microwave and millimeter-wave regime.

Manufacturability and applications of SiGe HBT technology

Abstract This article reviews the status of IBMs SiGe HBT technology, with a focus on manufacturability issues and circuit applications. Device design and process integration issues which have driven the development of the technology are discussed. Device results are shown, emphasizing the demonstration of reproducibility and yield in the manufacturing environment. Reproducibility of parameters for the 47/65 GHz (f T / f MAX ) SiGe HBT is shown to be superior to that of BJTs in state-of-the-art implanted-base processes. Recent circuit results, covering the performance range from 1 to 23 GHz, are reviewed. The addition of a polyimide/gold backend process for low-loss inductors and transmission lines is key to MMIC applications operating at 12 GHz and above.

A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications

Abstract Graded SiGe-base heterojunction transistors (HBTs) offer the advantages of bandgap engineering while maintaining the cost and manufacturing benefits of the silicon industry. For a technology to be widely used in the mixed signal applications arena it must offer more than just the HBT: it must have a complete set of passive elements and interconnects suitable for the rf design environment. This paper describes the development and current status of IBMs advanced SiGe HBT technology installed on a 200 mm CMOS/DRAM line. It reviews basic principles of HBT operation, discusses the aspects of the ultra high vacuum chemical vapor deposition (UHV/CVD) growth technique, describes the overall SiGe HBT process, the performance of the HBTs and support devices, and the circuit results achieved to data.

Gate-assisted lateral PNP active load for analog SiGe HBT technology

This work presents the development of a gate-assisted lateral PNP as a high transconductance active load device for analog SiGe HBT technology. We discuss three distinct modes of operation, device optimization and circuit results.