M Pantouvaki

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO2) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The po...

Active Components for 50 Gb/s NRZ-OOK Optical Interconnects in a Silicon Photonics Platform

We present active components developed in imecs silicon photonics platform that enable 50-Gb/s non-return-to-zero operation using CMOS compatible voltages.

Extraction of carrier lifetime in Ge waveguides using pump probe spectroscopy

Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated in waveguides with varying Ge thickness and width is probed using a CW laser. The lifetimes of these excess carriers strongly depend on the thickness and width of the waveguide due to defect assisted surface recombination. Interface recombination velocities of 0.975 × 104 cm/s and 1.45 × 104 cm/s were extracted for the Ge/Si and the Ge/SiO2 interfaces, respectively.

Room temperature InGaAs/InP distributed feedback laser directly grown on silicon

We report an optically pumped room-temperature O-band DFB laser, based on the buffer-less epitaxial growth of high quality InGaAs/InP waveguides directly on silicon wafer.