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Mako Kobayashi

Mitsubishi

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Publication

Featured researches published by Mako Kobayashi.

Archive | 1998

Semiconductor memory device capable of increasing chip yields while maintaining rapid operation

Mako Kobayashi; Tetsushi Tanizaki; Kazutami Arimoto; Teruhiko Amano; Takeshi Fujino; Takahiro Tsuruda; Fukashi Morishita; Mitsuya Kinoshita

Archive | 2001

Substrate bias voltage generating circuit

Nobuyuki Fujii; Fukashi Morishita; Mihoko Akiyama; Akira Yamazaki; Mako Kobayashi; Yasuhiko Taito

Archive | 1998

Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement

Tetsushi Tanizaki; Mitsuya Kinoshita; Takeshi Fujino; Takahiro Tsuruda; Fukashi Morishita; Teruhiko Amano; Kazutami Arimoto; Mako Kobayashi

Archive | 2000

High speed operable semiconductor memory device with memory blocks arranged about the center

Teruhiko Amano; Takahiro Tsuruda; Kazutami Arimoto; Tetsushi Tanizaki; Takeshi Fujino; Mitsuya Kinoshita; Fukashi Morishita; Mako Kobayashi

Archive | 2001

Constant internal voltage generation circuit

Mako Kobayashi; Fukashi Morishita

Archive | 1999

Substrate voltage generating circuit provided with a transistor having a thin gate oxide film and a semiconductor integrated circuit device provided with the same

Mako Kobayashi; Akira Yamazaki

Archive | 1998

Voltage converting circuit allowing control of current drivability in accordance with operational frequency

Mako Kobayashi; Fukashi Morishita

Archive | 1998

Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip area

Fukashi Morishita; Teruhiko Amano; Kazutami Arimoto; Tetsushi Tanizaki; Takeshi Fujino; Takahiro Tsuruda; Mitsuya Kinoshita; Mako Kobayashi

Archive | 2001

Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area

Mako Kobayashi; Fukashi Morishita

Archive | 2000

Semiconductor device including voltage down converter allowing tuning in short period of time and reduction of chip area

Mako Kobayashi; Fukashi Morishita

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Collaboration

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Fukashi Morishita

Renesas Electronics

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Akira Yamazaki

Mitsubishi Electric

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Mihoko Akiyama

Mitsubishi Electric

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Nobuyuki Fujii

Mitsubishi Electric

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Yasuhiko Taito

Renesas Electronics

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Kazutami Arimoto

Renesas Electronics

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Mitsuya Kinoshita

Mitsubishi Electric

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Takahiro Tsuruda

Mitsubishi

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Takeshi Fujino

Mitsubishi Electric

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Teruhiko Amano

Mitsubishi Electric

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