Mitsuya Kinoshita

A high density memory for SoC with a 143MHz SRAM interface using sense-synchronized-read/write

A high density memory (HDRAM) for SoC with SRAM interface is described. This macro achieves no-wait fast random-cycle operation owing to a sense-synchronized read/write scheme. A 4Mb test device is fabricated in a 0.15/spl mu/m process and achieves 143MHz operation. Its size and standby power are 4.59mm/sup 2/ and 92mW, which are 30% and 4.8%, respectively, of an embedded SRAM macro fabricated identically.

Design methodology of the embedded DRAM with the virtual socket architecture

This paper proposes the virtual socket architecture in order to reduce the design turn around time (TAT) of the embedded DRAM. By using the proposed architecture, the DRAM control circuitry is provided as the software macro to take advantage of the automated tools based on the synchronous circuit design. With array generator technology, this architecture can achieve high quality, quick turn around time (QTAT) flexible eDRAM design almost the same as the CMOS ASIC. We applied this virtual socket architecture to the 0.18 /spl mu/m embedded DRAM test device and confirmed over 166 MHz operation.