Manzur Gill

A 600-MHz VLIW DSP

A 600 MHz VLIW DSP, which implements the C64x VelociTI.2/spl trade/ architecture delivers 4800 MIPS, 2400 (16 b) or 4800 (8 b) million multiply accumulates at 0.3 mW/MMAC (16 b). The chip has 64 M transistors and dissipates 718 mW at 600 MHz and 1.2 V, and 200 mW at 300 MHz and 0.9 V. It has an 8-way VLIW DSP core, a 2-level memory system, and 2.4 GB/s I/O bandwidth. The DSP chip is implemented in 0.13 μm CMOS technology with 6-layer copper metalization.

An experimental 4 Mb flash EEPROM with sector erase

A 512K*8 flash EEPROM (electrically erasable programmable ROM) which operates from a single 5-V supply was designed and fabricated. A double-poly, single-metal CMOS process with a minimum feature size of 0.9 mu m was developed to manufacture the test vehicle, which resulted in a die size of 95 mm/sup 2/. The storage cell is 8.64 mu m/sup 2/ and consists of a one-transistor cell that uses a remote, scalable, tunnel diode for programming and erasing by Fowler-Nordheim tunneling. Process high-voltage requirements are relaxed by utilizing circuit techniques to alleviate the burden of high voltages. A segmented architecture provides the flexibility to erase any one sector (16 kB) or the entire chip during one cycle by an erase algorithm. The memory can be programmed one byte at a time, or the internal bit-line latches can be used to program a 256-B page in one cycle. A programming time of 10 ms is typical, which results in a write time of 40 mu s/B during page programming. The chip features an access time of 90 ns. >

A 65nm C64x+ Multi-Core DSP Platform for Communications Infrastructure

The combined processing power of three 1+GHz DSP cores and 65nm 7M CMOS integration delivers a WCDMA macro base-station on a single chip. The 300M transistor IC can perform up to 24000MIPS, 8000 16b MMACs per second, coupled with symbol-rate and chip-rate acceleration and dissipates less than 6W.

A 5 V-only 256 kbit CMOS flash EEPROM

The authors describe a 256-kbit flash EEPROM (electrically erasable and programmable read-only memory) device which requires only 5 V for program, erase, and read operations and has performance and cost comparable to that of the recently reported dual-power-supply flash EEPROMs, which require 12 V for programming and erase and 5 V for read. The memory cell consists of a floating-gate transistor and a merged-pass-gate transistor. The process is array-contactless EEPROM (ACEE), with buried source/drain for the bit lines with a tunnel oxide module and a 20-V CMOS module. The program and erase operations employ the Fowler-Nordheim current tunneled through 100-AA oxide when the proper electrical voltages are applied to the selected bit. The device and technology parameters are summarized.<<ETX>>