Mario J. Meissl
University of Texas at Austin
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Featured researches published by Mario J. Meissl.
Journal of Vacuum Science & Technology B | 2000
Todd C. Bailey; Byung Jin Choi; Matthew E. Colburn; Mario J. Meissl; S. Shaya; John G. Ekerdt; S. V. Sreenivasan; C. G. Willson
We have finished the construction of an automated tool for step and flash imprint lithography. The tool was constructed to allow defect studies by making multiple imprints on a 200 mm wafer. The imprint templates for this study were treated with a low surface energy, self-assembled monolayer to ensure selective release at the template-etch barrier interface. This surface treatment is very durable and survives repeated imprints and multiple aggressive physical and chemical cleanings. The imprint and release forces were measured for a number of successive imprints, and did not change significantly. The process appears to be “self-cleaning.” Contamination on the template is entrained in the polymerizing liquid, and the number of defects is reduced with repeated imprints.
Journal of Vacuum Science & Technology B | 2001
Matthew E. Colburn; Itai Suez; Byung Jin Choi; Mario J. Meissl; Todd C. Bailey; S. V. Sreenivasan; John G. Ekerdt; C. Grant Willson
Step and flash imprint lithography (SFIL) is an alternative approach to high-resolution patterning based on a bilayer imprint scheme. SFIL utilizes the in situ photopolymerization of an oxygen etch resistant monomer solution in the topography of a template to replicate the template pattern on a substrate. The SFIL replication process can be affected significantly by the densification associated with polymerization and by the mechanical properties of the cured film. The densities of cured photopolymers were determined as a function of pendant group volume. The elastic moduli of several photopolymer samples were calculated based on a Hertzian fit to force–distance data generated by atomic force microscopy. The current SFIL photopolymer formulation undergoes a 9.3% (v/v) densification. The elastic modulus of the SFIL photopolymer is 4 MPa. The densification and the elastic modulus of the photopolymer layer can be tailored from 4% to 16%, and from 2 to 30 MPa, respectively, by changing the structure of the ph...
Journal of Vacuum Science & Technology B | 2001
Todd C. Bailey; Britain J. Smith; Byung Jin Choi; Matthew E. Colburn; Mario J. Meissl; S. V. Sreenivasan; John G. Ekerdt; C. G. Willson
Step and flash imprint lithography (SFIL) is a promising, low cost alternative to projection printing. This technique has demonstrated very high resolution and overlay alignment capabilities, but it is a contact printing technique so there is concern about defect generation and propagation. A series of experiments has been carried out with the goal of quantifying the effect of defect propagation. To that end, each unit process in SFIL was studied independently. The number of particles added during handling and transportation and due to SFIL machinery was deemed acceptable, and the added particles should not complicate the inspection of process defects. The concept of a “self-cleaning” process in which the imprint template becomes cleaner by imprinting was revisited. Inspection of an imprint template before and after imprinting revealed that the template actually becomes cleaner with imprinting. Visual inspection of multiple imprints did not reveal any systematic generation or propagation of defects. The inspection area used in this study was limited, however, since the inspection was both manual and visual. Imprinting for this defect study was performed at the University of Texas in a Class 10 cleanroom, and inspection was performed at International SEMATECH.
Microelectronic Engineering | 2002
Todd C. Bailey; Douglas J. Resnick; David P. Mancini; Kevin J. Nordquist; William J. Dauksher; Eric S. Ainley; A. Talin; Kathy A. Gehoski; Jeffrey H. Baker; Byung Jin Choi; Stephen C. Johnson; Matthew E. Colburn; Mario J. Meissl; S. V. Sreenivasan; John G. Ekerdt; C. G. Willson
Abstract Step and flash imprint lithography (SFIL) is an attractive method for printing sub-100 nm geometries. Relative to other imprinting processes, SFIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. The purpose of this work is to investigate alternative processes for defining features on an SFIL template. The first method considered using a much thinner (
Workshop on Nanostructure Science, Metrology, and Technology | 2002
Douglas J. Resnick; Todd C. Bailey; David P. Mancini; Kevin J. Nordquist; William J. Dauksher; Eric S. Ainley; A. Talin; Kathleen A. Gehoski; Jeffrey H. Baker; Byung Jin Choi; Stephen C. Johnson; Matthew E. Colburn; Mario J. Meissl; S. V. Sreenivasan; John G. Ekerdt; C. Grant Willson
Step and Flash Imprint Lithography (SFIL) is an attractive method for printing sub-100 nm geometries. Relative to other imprinting processes SFIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. The purpose of this work is to investigate alternative methods for defining features on an SFIL template. The first method used a much thinner (< 20 nm) layer of Cr as a hard mask. Thinner layers still suppress charging during e-beam exposure of the template, and have the advantage that CD losses encountered during the pattern transfer of the Cr are minimized. The second fabrication scheme addresses some of the weaknesses associated with a solid glass substrate. Because there is no conductive layer on the final template, SEM and defect inspection are compromised. By incorporating a conductive and transparent layer of indium tin oxide on the glass substrate, charging is suppressed during inspection, and the UV characteristics of the final template are not affected. Templates have been fabricated using the two methods described above. Features as small as 30 nm have been resolved on the templates. Sub-80 nm features were resolved on the first test wafer printed.
IEEE-ASME Transactions on Mechatronics | 2015
Anshuman Cherala; Philip D. Schumaker; Babak Mokaberi; Kosta Selinidis; Byung Jin Choi; Mario J. Meissl; Niyaz Khusnatdinov; Dwayne L. LaBrake; S. V. Sreenivasan
Jet and flash imprint lithography steppers have demonstrated unprecedented capability for patterning of sub-25-nm features for semiconductor manufacturing. A critical requirement for such patterning is the ability to overlay one layer of a device to a previously printed layer. In this paper, the design and development of a nanoprecision mask magnification/shape control system (MSCS) for the unique requirements of imprint-based overlay is presented. Imprint specific topics such as in-liquid overlay and distortions, and on-tool overlay metrology are discussed. The MSCS presented here has demonstrated 10-nm mix and match overlay (mean + 3 sigma) capability that approaches performance of state-of-the-art photolithography tools.
Archive | 2013
Mario J. Meissl; Byung Jin Choi; S. V. Sreenivasan
Semiconductor wafer nanolithography machines integrate nano-scale precision mechanisms with advanced optical and mechatronic modules to achieve highly controlled nanopatterning capability for fabricating advanced integrated circuits, photonics, and optoelectronic devices. The machines achieve their precision by combining the use of highly repeatable nano-resolution actuators and motion systems, and on-tool precision calibration that is typically required for assembled systems since the sub-system machining precision is inherently insufficient.
Archive | 2002
Sidlgata V. Sreenivasan; Byung-Jin Choi; Norman E. Schumaker; Ronald D. Voisin; Michael P. C. Watts; Mario J. Meissl
Archive | 2002
Byung Jin Choi; Mario J. Meissl; Sidlagata V. Sreenivasan; Michael P. C. Watts
Archive | 2002
Sidlgata V. Sreenivasan; Michael P. C. Watts; Byung Jin Choi; Mario J. Meissl; Norman E. Schumaker; Ronald D. Voisin