Matthew E. Colburn

Step and flash imprint lithography: Template surface treatment and defect analysis

We have finished the construction of an automated tool for step and flash imprint lithography. The tool was constructed to allow defect studies by making multiple imprints on a 200 mm wafer. The imprint templates for this study were treated with a low surface energy, self-assembled monolayer to ensure selective release at the template-etch barrier interface. This surface treatment is very durable and survives repeated imprints and multiple aggressive physical and chemical cleanings. The imprint and release forces were measured for a number of successive imprints, and did not change significantly. The process appears to be “self-cleaning.” Contamination on the template is entrained in the polymerizing liquid, and the number of defects is reduced with repeated imprints.

Polymer self assembly in semiconductor microelectronics

Integration of polymer self assembly with semiconductor processing enables sub-lithographic patterning of integrated circuit (IC) device elements and offers a non-traditional pathway to performance improvements (Black, 2005). We discuss target applications including surface-roughening for on-chip decoupling capacitors (Black et al., 2004), patterning nanocrystal floating gates for FLASH devices (Guarini et al., 2003), and defining FET channel arrays (Black, 2005)

Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography

Submicron patterning of 1 in. diameter curved surfaces with a 46 mm radius of curvature has been demonstrated with step and flash imprint lithography (SFIL) using templates patterned by ion beam proximity printing (IBP). Concave and convex spherical quartz templates were coated with 700-nm-thick poly(methylmethacrylate) (PMMA) and patterned by step-and-repeat IBP. The developed resist features were etched into the quartz template and the remaining PMMA stripped. During SFIL, a low viscosity, photopolymerizable formulation containing organosilicon precursors was introduced into the gap between the etched template and a substrate coated with an organic transfer layer and exposed to ultraviolet illumination. The smallest features on the templates were faithfully replicated in the silylated layer.

Characterization and modeling of volumetric and mechanical properties for step and flash imprint lithography photopolymers

Step and flash imprint lithography (SFIL) is an alternative approach to high-resolution patterning based on a bilayer imprint scheme. SFIL utilizes the in situ photopolymerization of an oxygen etch resistant monomer solution in the topography of a template to replicate the template pattern on a substrate. The SFIL replication process can be affected significantly by the densification associated with polymerization and by the mechanical properties of the cured film. The densities of cured photopolymers were determined as a function of pendant group volume. The elastic moduli of several photopolymer samples were calculated based on a Hertzian fit to force–distance data generated by atomic force microscopy. The current SFIL photopolymer formulation undergoes a 9.3% (v/v) densification. The elastic modulus of the SFIL photopolymer is 4 MPa. The densification and the elastic modulus of the photopolymer layer can be tailored from 4% to 16%, and from 2 to 30 MPa, respectively, by changing the structure of the ph...

Step and flash imprint lithography: Defect analysis

Step and flash imprint lithography (SFIL) is a promising, low cost alternative to projection printing. This technique has demonstrated very high resolution and overlay alignment capabilities, but it is a contact printing technique so there is concern about defect generation and propagation. A series of experiments has been carried out with the goal of quantifying the effect of defect propagation. To that end, each unit process in SFIL was studied independently. The number of particles added during handling and transportation and due to SFIL machinery was deemed acceptable, and the added particles should not complicate the inspection of process defects. The concept of a “self-cleaning” process in which the imprint template becomes cleaner by imprinting was revisited. Inspection of an imprint template before and after imprinting revealed that the template actually becomes cleaner with imprinting. Visual inspection of multiple imprints did not reveal any systematic generation or propagation of defects. The inspection area used in this study was limited, however, since the inspection was both manual and visual. Imprinting for this defect study was performed at the University of Texas in a Class 10 cleanroom, and inspection was performed at International SEMATECH.

Design of orientation stages for step and flash imprint lithography

This paper presents the design of orientation stages for high-resolution imprint lithography machines. These machines implement a new lithography process known as Step and Flash Imprint Lithography (SFIL) and are intended for 1) sub 100 nm imprint demonstrations on flat substrates and 2) investigation of potential defect propagation during step and repeat imprinting. SFIL is an imprint lithography process that is a combination of chemical and mechanical steps and its implementation at room temperature and low pressure makes it an attractive process as compared to other imprint techniques. A critical component of an imprint machine is the orientation stage that is required to provide uniform intimate contact between the template and substrate surfaces. The orientation stage requirements are distinct from those used in photolithography since the depth of focus of projection optics allows for larger errors in the orientation alignment. Also, due to contact between the template and substrate surfaces in imprint lithography, the separation kinematics must be carefully controlled in the SFIL process. Two different orientation stages are designed for single- and multi-imprint machines. In order to eliminate the particle contamination due to frictional contacts, all joints are made with flexure joints. Imprint experiments have been performed to demonstrate sub 100 nm imprints.

Template fabrication schemes for step and flash imprint lithography

Abstract Step and flash imprint lithography (SFIL) is an attractive method for printing sub-100 nm geometries. Relative to other imprinting processes, SFIL has the advantage that the template is transparent, thereby facilitating conventional overlay techniques. The purpose of this work is to investigate alternative processes for defining features on an SFIL template. The first method considered using a much thinner (

A 0.063 µm 2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

We demonstrate the smallest FinFET SRAM cell size of 0.063 µm2 reported to date using optical lithography. The cell is fabricated with contacted gate pitch (CPP) scaled to 80 nm and fin pitch scaled to 40 nm for the first time using a state-of-the-art 300 mm tool set. A unique patterning scheme featuring double-expose, double-etch (DE2) sidewall image transfer (SIT) process is used for fin formation. This scheme also forms differential fin pitch in the SRAM cells, where epitaxial films are used to merge only the tight pitch devices. The epitaxial films are also used for conformal doping of the devices, which reduces the external resistance significantly. Other features include gate-first metal gate stacks and transistors with 25 nm gate lengths with excellent short channel control.

Patterning nonflat substrates with a low pressure, room temperature, imprint lithography process

Step and flash imprint lithography (SFIL) is a technique that has the potential to replace photolithography for patterning resist with sub-100 nm features. SFIL is a low cost, high throughput alternative to conventional photolithography for high-resolution patterning. It is a molding process in which the topography of a template defines the patterns created on a substrate. The ultimate resolution of replication by imprint lithography is unknown but, to date, it has only been limited by the size of the structures that can be created on the template. It is entirely possible to faithfully replicate structures with minimum features of a few hundred angstroms. SFIL utilizes a low-viscosity, photosensitive silylated solution that exhibits high etch contrast with respect to organic films in O2 reactive ion etching. In this article we describe the SFIL process, the development of a multilayer etch scheme that produces 6:1 aspect ratio features with 60 nm linewidths, a method for patterning high-aspect-ratio featu...

22 nm technology compatible fully functional 0.1 μm 2 6T-SRAM cell

We demonstrate 22 nm node technology compatible, fully functional 0.1 mum2 6T-SRAM cell using high-NA immersion lithography and state-of-the-art 300 mm tooling. The cell exhibits a static noise margin (SNM) of 220 mV at Vdd=0.9 V. We also present a 0.09 mum2 cell with SNM of 160 mV at Vdd=0.9 V demonstrating the scalability of the design with the same layout. This is the worlds smallest 6T-SRAM cell. Key enablers include band edge high-kappa metal gate stacks, transistors with 25 nm gate lengths, thin spacers, novel co-implants, advanced activation techniques, extremely thin silicide, and damascene copper contacts.