Maximilian Rösch
Infineon Technologies
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Maximilian Rösch.
international power electronics and motion control conference | 2006
Ralf Siemieniec; Franz Hirler; Andreas Schlögl; Maximilian Rösch; Negar Soufi-Amlashi; Jan Ropohl; Uli Hiller
A new, rugged 100 V power MOSFET of the OptiMOStrade 2-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance RON with outstanding switching properties. The technology also offers a small gate charge QG and a small gate resistance RG. In addition, the internal body diode, when acting as freewheeling diode, reveals a soft reverse-recovery with a small reverse-recovery charge Q RR. Therefore, the technology is particularly suitable for a variety of applications, including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, Class-D amplifiers, and motor control
european conference on power electronics and applications | 2007
I. Pawel; Ralf Siemieniec; Maximilian Rösch; Franz Hirler; Christian Geissler; A. Pugatschow; L.J. Balk
The avalanche behavior of new 150 V trench power MOSFETs was designed with the help of two- dimensional device simulation techniques. The devices employ the compensation principle for low on-state losses. A new edge-termination structure ensures that avalanche breakdown always occurs in the cell region of the device. For the transistor cells, two different destruction regimes were identified: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects were proposed. The found dependence on design parameters based on device simulation was qualitatively confirmed by experimental results. Furthermore, strong dependence between on-resistance and avalanche current was shown.
european conference on power electronics and applications | 2005
A. Schogl; Franz Hirler; J. Ropohl; U. Hiller; Maximilian Rösch; N. Soufi-Amlashi; Ralf Siemieniec
A new 100-V power MOSFET of the OPTIMOSreg 2-family is described. The application of compensation principles leads to a device technology that combines low RON with outstanding switching properties. The technology also offers small gate charge QG and gate resistance RG. In addition, the internal body diode, if acting as free-wheeling diode, reveals a soft reverse recovery with a small reverse recovery charge QRR resulting in relatively small voltage overshoots. Therefore, the technology is particularly suitable for a variety of applications including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, as well as motor control
Iet Circuits Devices & Systems | 2007
Ilja Pawel; Ralf Siemieniec; Maximilian Rösch; Franz Hirler; Reinhard Herzer
Archive | 2006
Franz Hirler; Jan Ropohl; Maximilian Rösch; Ralf Siemieniec; Markus Zundel
european conference on power electronics and applications | 2011
Ralf Siemieniec; C. Mößlacher; Oliver Blank; Maximilian Rösch; M. Frank; Michael Hutzler
Archive | 2006
Franz Hirler; Jan Ropohl; Maximilian Rösch; Ralf Siemieniec; Markus Zundel
Archive | 2009
Oliver Blank; Uli Hiller; Maximilian Rösch; Ralf Siemieniec
Archive | 2006
Franz Hirler; Maximilian Rösch; Ralf Siemieniec
Archive | 2006
Franz Hirler; Maximilian Rösch; Ralf Siemieniec