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Dive into the research topics where Maximilian Rösch is active.

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Featured researches published by Maximilian Rösch.


international power electronics and motion control conference | 2006

A New Fast and Rugged 100 V Power MOSFET

Ralf Siemieniec; Franz Hirler; Andreas Schlögl; Maximilian Rösch; Negar Soufi-Amlashi; Jan Ropohl; Uli Hiller

A new, rugged 100 V power MOSFET of the OptiMOStrade 2-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance RON with outstanding switching properties. The technology also offers a small gate charge QG and a small gate resistance RG. In addition, the internal body diode, when acting as freewheeling diode, reveals a soft reverse-recovery with a small reverse-recovery charge Q RR. Therefore, the technology is particularly suitable for a variety of applications, including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, Class-D amplifiers, and motor control


european conference on power electronics and applications | 2007

Design of avalanche capability of Power MOSFETs by device simulation

I. Pawel; Ralf Siemieniec; Maximilian Rösch; Franz Hirler; Christian Geissler; A. Pugatschow; L.J. Balk

The avalanche behavior of new 150 V trench power MOSFETs was designed with the help of two- dimensional device simulation techniques. The devices employ the compensation principle for low on-state losses. A new edge-termination structure ensures that avalanche breakdown always occurs in the cell region of the device. For the transistor cells, two different destruction regimes were identified: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects were proposed. The found dependence on design parameters based on device simulation was qualitatively confirmed by experimental results. Furthermore, strong dependence between on-resistance and avalanche current was shown.


european conference on power electronics and applications | 2005

A new robust power MOSFET family in the voltage range 80 V-150 V with superior low R/sub Dson/, excellent switching properties and improved body diode

A. Schogl; Franz Hirler; J. Ropohl; U. Hiller; Maximilian Rösch; N. Soufi-Amlashi; Ralf Siemieniec

A new 100-V power MOSFET of the OPTIMOSreg 2-family is described. The application of compensation principles leads to a device technology that combines low RON with outstanding switching properties. The technology also offers small gate charge QG and gate resistance RG. In addition, the internal body diode, if acting as free-wheeling diode, reveals a soft reverse recovery with a small reverse recovery charge QRR resulting in relatively small voltage overshoots. Therefore, the technology is particularly suitable for a variety of applications including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, as well as motor control


Iet Circuits Devices & Systems | 2007

Experimental study and simulations on two different avalanche modes in trench power MOSFETs

Ilja Pawel; Ralf Siemieniec; Maximilian Rösch; Franz Hirler; Reinhard Herzer


Archive | 2006

Durch Feldeffekt steuerbares Halbleiterbauelement und Verfahren zu dessen Herstellung

Franz Hirler; Jan Ropohl; Maximilian Rösch; Ralf Siemieniec; Markus Zundel


european conference on power electronics and applications | 2011

A new power MOSFET generation designed for synchronous rectification

Ralf Siemieniec; C. Mößlacher; Oliver Blank; Maximilian Rösch; M. Frank; Michael Hutzler


Archive | 2006

Semiconductor component i.e. MOSFET, has semiconductor body comprising p-doped body-zone and contact zone that is doped stronger than body zone and strongly n-doped source-zone arranged between front side of component and contact zone

Franz Hirler; Jan Ropohl; Maximilian Rösch; Ralf Siemieniec; Markus Zundel


Archive | 2009

Halbleiterbauelement mit einem Halbleiterkörper

Oliver Blank; Uli Hiller; Maximilian Rösch; Ralf Siemieniec


Archive | 2006

Mittels Feldeffekt steuerbarer Trench-Transistor mit zwei Steuerelektroden

Franz Hirler; Maximilian Rösch; Ralf Siemieniec


Archive | 2006

Field effect controllable trench transistor, has trench formed in semiconductor and primary control electrode formed in trench with gate electrode, which is insulated by primary insulation layer opposite to semiconductor body

Franz Hirler; Maximilian Rösch; Ralf Siemieniec

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