Michael A. Xapsos

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

Experimental results are presented on single-bit-upsets (SBU) and multiple-bit-upsets (MBU) on a 45 nm SOI SRAM. The accelerated testing results show the SBU-per-bit cross section is relatively constant with technology scaling but the MBU cross section is increasing. The MBU data show the importance of acquiring and analyzing the data with respect to the location of the multiple-bit upsets since the relative location of the cells is important in determining which MBU upsets can be corrected with error correcting code (ECC) circuits. For the SOI SRAMs, a large MBU orientation effect is observed with most of the MBU events occurring along the same SRAM bit-line; allowing ECC circuits to correct most of these MBU events.

Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported for other deep submicron technologies. The experimental data are used to calibrate a Monte Carlo rate prediction model, which is used to evaluate the importance of this upset mechanism in typical space environments. For the ISS orbit and a geosynchronous (worst day) orbit, direct ionization from protons is a major contributor to the total error rate, but for a geosynchronous (solar min) orbit, the proton flux is too low to cause a significant number of events. The implications of these results for hardness assurance are discussed.

Proton nonionizing energy loss (NIEL) for device applications

The proton-induced nonionizing energy loss (NIEL) for representative device materials are presented for the energy range between the displacement damage threshold to 1 GeV. All interaction mechanisms (Coulomb and nuclear elastic/nonelastic) are fully accounted for in the present NIEL calculations. For Coulomb interactions, the Ziegler-Biersack-Littmark (ZBL) screened potential was used in the lower energy range (<50 MeV) and the relativistic formulation was used in the higher energy range (/spl ges/50 MeV). A charged particle transport code, MCNPX, was used to compute the NIEL due to nuclear interactions.

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results are very different for the 65 nm SRAM as compared with SRAMs fabricated in previous technology generations. Specifically, no upset threshold is observed as the proton energy is decreased down to 1 MeV; and a sharp rise in the upset cross-section is observed below 1 MeV. The increase below 1 MeV is attributed to upsets caused by direct ionization from the low energy protons. The implications of the low energy proton upsets are discussed for space applications of 65 nm SRAMs; and the implications for radiation assurance testing are also discussed.

The Near-Earth Space Radiation Environment

The effects of the space radiation environment on spacecraft systems and instruments are significant design considerations for space missions. Astronaut exposure is a serious concern for manned missions. In order to meet these challenges and have reliable, cost-effective designs, the radiation environment must be understood and accurately modeled. The nature of the environment varies greatly between low earth orbits and higher earth orbits. There are both short-term and long-term variations with the phase of the solar cycle. In this paper we concentrate mainly on charged particle radiations in the near-Earth region. Descriptions of the radiation belts and particles of solar and cosmic origin are reviewed. An overview of the traditional models is presented accompanied by their application areas and limitations. This is followed by discussion of some recent model developments.

NIEL for heavy ions: an analytical approach

We describe an analytical model for calculating nonionizing energy loss (NIEL) for heavy ions based on screened Coulomb potentials in the nonrelativistic limit. The model applies to any incident ion on any target material where the Coulomb interaction is primarily responsible for atomic displacement. Results are compared with previous methods of extracting NIEL from Monte Carlo SRIM runs. Examples of NIEL calculations are given for incident ions having energies ranging from the threshold for atomic displacement to 1 GeV. The incident ions include H, He, B, Si, Fe, Xe, and Au. Example targets include Si, GaAs, InP, and SiC.

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAMs state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the incident ion to the n- and p-wells of the SRAM. The MBU response is simulated using Monte Carlo methods for a space environment. The probability is calculated for event size. Single-bit upsets in the space environment account for 90% of all events with exponentially decreasing probabilities of larger MBU events.

Model for solar proton risk assessment

A statistical model for cumulative solar proton event fluences during space missions is presented that covers both the solar minimum and solar maximum phases of the solar cycle. It is based on data from the Interplanetary Monitoring Platform and Geostationary Operational Environmental Satellites series of satellites, which are integrated together to allow the best features of each data set to be used to the best advantage. This allows the fluence-energy spectra to be extended out to energies of 327 MeV.

Model for Cumulative Solar Heavy Ion Energy and Linear Energy Transfer Spectra

A probabilistic model of cumulative solar heavy ion energy and LET spectra is developed for spacecraft design applications. Spectra are given as a function of confidence level, mission time period during solar maximum and shielding thickness. It is shown that long-term solar heavy ion fluxes exceed galactic cosmic ray fluxes during solar maximum for shielding levels of interest. Cumulative solar heavy ion fluences should therefore be accounted for in single event effects rate calculations and in the planning of space missions.