Min Shi

Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

This letter describes the formation of one-time-programmable (OTP) memory using standard contact fuse and polysilicon diode in a standard CMOS technology. Programming of the contact fuse is achieved by applying a high current pulse to destroy the contact. Compared with other existing OTP technologies, the proposed approach has the advantage of zero additional mask, no additional processing step, compact structure, and low programming voltage. The described OTP has been demonstrated in a 0.18-μm CMOS technology from TSMC with a cell size of 2.33 μm2 . The contact fuse can be programmed with a voltage of 3 V and a current of 2.4 mA.

Tunable Matching Network Using MEMS Switches

This paper presents a novel approach in order to construct low-loss reconfigurable impedance matching networks and tuners using MEMS series-contact switches and periodic defected-ground-structures (DGSs) implemented on coplanar waveguide (CPW) transmission lines. The application of DGSs results in an improved insertion loss and power handling capability compared to the conventional RF MEMS impedance tuning networks. The proposed structure consists of 12 DGSs and RF MEMS series-contact switches. The tunable matching network was fabricated on a silicon substrate and is only 1.4×̃˾̈˰̽̽˰̹̾˰̵̹̓͊˾˰̸̵̤˰̵̵̴̱̽̓͂ͅ˰̼̿̓̓˰̶̿˰̸̵̈́˰̵͇̻̾̈́̿͂˰̸̵͇̾˰̵̴̓ͅ˰̈́̿˰̸̱̳̽̈́˰̱˰́̀˰Ω˰̴̼̱̿˰̈́̿˰̅̀˰Ω˰̶͂̿m 5GHz up to 40 GHz is only 0.8 dB. The results show that the tuner can achieve a broadband impedance match for a wide variety of loads that are either purely resistive or that have a large reactance as well.