Yong Ma

Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

This letter describes the formation of one-time-programmable (OTP) memory using standard contact fuse and polysilicon diode in a standard CMOS technology. Programming of the contact fuse is achieved by applying a high current pulse to destroy the contact. Compared with other existing OTP technologies, the proposed approach has the advantage of zero additional mask, no additional processing step, compact structure, and low programming voltage. The described OTP has been demonstrated in a 0.18-μm CMOS technology from TSMC with a cell size of 2.33 μm2 . The contact fuse can be programmed with a voltage of 3 V and a current of 2.4 mA.

A compact model of diode array for Phase Change Memory

In this paper, a compact diode array model for Phase Change Memory (PCM) application is presented. From the diode array structure and numerical simulation result, a quasi-physical compact model is proposed by combining the classical diode equation and simplified bipolar device formulation. This model results in accurate calculation of different leakage current components with parameter setting. Furthermore, the presented model is an open model structure, and can be applied in different fabrication process with the parameter extraction. All these characteristics make it useful in further study of physical mechanism of carrier transmissions in order to illustrate the device physics of such an array diode device.

A nano-metallic-particles-based CMOS image sensor for DNA detection

In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano-metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 μm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.

Characteristics of subband current ratio in double-gate MOSFET

The subband current is evaluated by solving the non-equilibrium Greens function (NEGF) self-consistently with Poissons equation for the double-gate MOSFETs with different channel lengths and thicknesses. The characteristics of subband current ratio and the details of subband number M are simulated, and the results show that the characteristics of current are determined by the first subband when TSi is smaller than 2.5nm, while the value of TSi is between 3.5nm and 5nm, the current of the second subband needs to be considered. The subband current ratios are highly related to the gate voltage, while less sensitive to the channel length. The suitable subband number M is also discussed for the devices with different sizes, which must be considered in balancing the model accuracy and the efficiency.

Numerical study on terahertz detection of MOS field-effect transistor

Terahertz (THZ) detection by field effect transistors (FETs) has been paid great attention in recent years. This paper outlined the numerical study of terahertz radiation detection by FETs in our group, including the fundamental THz detection model, detection model with two sources, heterodyne detection model and optical beating model. These study results demonstrated the potential application of MOSFETs as THz detectors, which may be helpful in the optimization of MOSFET in improving THZ detector performance.

Modeling of terahertz resonant detection of MOS field effect transistor operating in all regions under optical beating mode

Modeling of resonant detection of terahertz (THz) radiation of Metal-Oxide-Semiconductor (MOS) field effect transistors (FETs) under the optical beating mode is studied in this paper. An analytical model is first proposed which covers all operation regions of FETs from sub-threshold to the strong inversion, and then is verified by the numerical tool which has been improved to simulate THz detection characteristics under the case of optical beating. Furthermore, extensive characteristics of resonant detection under the optical beating mode have been predicted.