Mitchell Hunt

Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a common-source amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

Modeling a Common-Source Amplifier Using a Ferroelectric Transistor

This paper presents a mathematical model characterizing the behavior of a common-source (CS) amplifier using a ferroelectric field-effect transistor (FeFET). The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the common-source amplifier is the most widely used amplifier in MOS technology, understanding and modeling the behavior of the FeFET-based common-source amplifier will help in the integration of FeFETs into many circuits.

A MATHEMATICAL MODEL OF A COMMON-DRAIN AMPLIFIER USING A FERROELECTRIC TRANSISTOR

ABSTRACT This paper presents a mathematical model characterizing the behavior of a common-drain amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the amplifier is the basis of many circuit configurations, a mathematical model that describes the behavior of a FeFET-based amplifier will help in the integration of FeFETs into many other circuits.

AN EMPIRICAL STUDY OF A FeFET-BASED ANALOG AMPLIFIER

ABSTRACT The use of ferroelectric field-effect transistors (FeFETs) to create simple amplifiers is not completely understood and has not been extensively studied. This paper summarizes the results of behavioral characterization of a FeFET-based analog amplifier. The characterization incorporates several variables that affect the amplifiers output, including frequency, load resistance, and gate-to-source voltage. More specifically, the relationship between the frequency of the input signal and each of the peak output voltage, phase shift of the output signal, and voltage gain is examined. Also analyzed is the effect of load resistance on each of these three output parameters. These relationships are noted in actual oscilloscope outputs.

Design and Testing of a 1T-1C Dynamic Random Access Memory Cell Utilizing a Ferroelectric Transistor

The ferroelectric transistor (FeFET) provides unique characteristics of memory circuits due to its hysteresis effects. This paper examines the design considerations of a 1T-1C dynamic random-access memory (DRAM) cell using a ferroelectric transistor. The research investigates the effects of the FeFET on the DRAM cell while modifying design parameters which are controlled by the circuit designer. Parameters include channel width and length and write-word-line (WWL) voltage. Experimental data will be taken for different circuit configurations. Comparisons will be made to similar circuits that utilize only metal-oxide-semiconductor field effect transistors (MOSFETs).

Characteristics of a Three-Transistor DRAM Circuit Utilizing a Ferroelectric Transistor

Dynamic random-access memory (DRAM) cells offer advantages over static random-access memory (SRAM) cells due to their reduced size and relaxed constraints on device sizing ratios. In this paper, the usage of a metal-ferroelectric-semiconductor field effect transistor (MFSFET) in a three-transistor dynamic random-access memory (DRAM) cell is examined, in order to determine the effects caused by its hysteresis properties. Combinations of metal-oxide-semiconductor field effect transistors (MOSFETs) and MFSFETs are explored, along with implementations consisting only of MFSFETs. The effects seen in these circuit configurations will be compared to configurations using only MOSFETs. Experimental data will be presented, showing the effect of varying parameters of the devices and circuit, such as channel length and width, input voltage waveforms, load devices, and capacitance. Particularly, attention will be given to the application of waveforms containing negative voltages to the gates of the transistors.

A Mathematical Model for the Common-Drain Amplifier Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

This paper presents a new mathematical model created for the common-drain amplifier using metal-ferroelectric-semiconductor field effect transistors (MFSFET). The model developed in this paper is based upon empirical data collected through experimentation with the common-drain amplifier while using a MFSFET. Several parameters are considered when calculating the output voltage, such as varying gate capacitance, input voltage, quiescent point, and power supply voltages. A comparison between collected and modeled data is presented as verification of the models performance when applied to the common-drain configuration.

Mathematical Models of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed in this paper. The models are compared against data collected with MFSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth.

Empirical Data of the Metal-Ferroelectric-Semiconductor Field Effect Transistor Polarization and Channel Resistance for Timing and Retention Analysis

In this paper, empirical data describing the channel resistance and polarization of several metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) is presented. Various channel length and width transistors were used to describe the channel resistance under various biasing conditions and in both positive and negative polarization states. The presented results and analysis provide insight into the switching speed between polarization states as well as the timing and retention constraints for a given set of device dimensions. This is of particular value when considering circuit designs that utilize MFSFETs, especially digital memory circuits.

Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

Collected data for both common-source and common-gate amplifiers is presented in this paper. Characterizations of the two amplifier circuits using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed with wider input frequency ranges and additional device sizes compared to earlier characterizations. The effects of the ferroelectric layers capacitance and variation of load, quiescent point, or input signal on each circuit are shown. Advantages and applications of the MFSFET and the circuit performance are discussed.